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1. (WO2019066874) VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON GAS (2DEG) LAYERS
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Pub. No.: WO/2019/066874 International Application No.: PCT/US2017/054155
Publication Date: 04.04.2019 International Filing Date: 28.09.2017
IPC:
H01L 29/778 (2006.01) ,H01L 29/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
778
with two-dimensional charge carrier gas channel, e.g. HEMT
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd Santa Clara, California 95054, US
Inventors:
GOSSNER, Harald; DE
BAUMGARTNER, Peter; DE
HODEL, Uwe; DE
SIPRAK, Domagoj; DE
LEUSCHNER, Stephan; DE
GEIGER, Richard; DE
THEN, Han Wui; US
RADOSAVLJEVIC, Marko; US
DASGUPTA, Sansaptak; US
Agent:
MUGHAL, Usman; US
Priority Data:
Title (EN) VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON GAS (2DEG) LAYERS
(FR) DISPOSITIF À CAPACITÉ VARIABLE À MULTIPLES COUCHES DE GAZ ÉLECTRONIQUE BIDIMENSIONNEL (2DEG)
Abstract:
(EN) A variable capacitance III-N device having multiple two-dimensional electron gas (2DEG) layers are described. In some embodiments, the device comprises a first source and a first drain; a first polarization layer adjacent to the first source and the first drain; a first channel layer coupled to the first source and the first drain and adjacent to the first polarization layer, the first channel layer comprising a first 2DEG region; a second source and a second drain; a second polarization layer adjacent to the second source and the second drain; and a second channel layer coupled to the second source and the second drain and adjacent to the second polarization layer, the second channel layer comprising a second 2DEG region, wherein the second channel layer is over the first polarization layer.
(FR) L'invention concerne un dispositif III-N à capacité variable ayant de multiples couches de gaz électronique bidimensionnel (2DEG). Dans certains modes de réalisation, le dispositif comprend une première source et un premier drain; une première couche de polarisation adjacente à la première source et au premier drain; une première couche de canal connectée à la première source et au premier drain et adjacente à la première couche de polarisation, la première couche de canal comprenant une première région de 2DEG; une deuxième source et un deuxième drain; une deuxième couche de polarisation adjacente à la deuxième source et au deuxième drain; et une deuxième couche de canal connectée à la deuxième source et au deuxième drain et adjacente à la deuxième couche de polarisation, la deuxième couche de canal comprenant une deuxième région de 2DEG, la deuxième couche de canal se trouvant sur la première couche de polarisation.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)