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1. (WO2019066849) A RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH SWITCHING MULTI-LAYER STACK AND METHODS OF FABRICATION
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Pub. No.: WO/2019/066849 International Application No.: PCT/US2017/053970
Publication Date: 04.04.2019 International Filing Date: 28.09.2017
IPC:
H01L 45/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd Santa Clara, California 95054, US
Inventors:
GLASSMAN, Timothy; US
SEGHETE, Dragos; US
STRUTT, Nathan; US
ASURI, Namrata S.; US
GOLONZKA, Oleg; US
KOTHARI, Hiten; US
ANDRUS, Matthew J.; US
Agent:
HOWARD, James; US
Priority Data:
Title (EN) A RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH SWITCHING MULTI-LAYER STACK AND METHODS OF FABRICATION
(FR) DISPOSITIF DE MÉMOIRE RÉSISTIVE À ACCÈS ALÉATOIRE AVEC EMPILEMENT MULTICOUCHE DE COMMUTATION ET PROCÉDÉS DE FABRICATION
Abstract:
(EN) A memory device includes a bottom electrode above a substrate, a first switching layer on the bottom electrode, a second switching layer including aluminum on the first switching layer, an oxygen exchange layer on the second switching layer and a top electrode on the oxygen exchange layer. The presence of the second switching layer including aluminum on the first switching layer enables a reduction in electro-forming voltage of the memory device.
(FR) L'invention concerne un dispositif de mémoire comprenant une électrode inférieure au-dessus d'un substrat, une première couche de commutation sur l'électrode inférieure, une seconde couche de commutation comprenant de l'aluminium sur la première couche de commutation, une couche d'échange d'oxygène sur la seconde couche de commutation et une électrode supérieure sur la couche d'échange d'oxygène. La présence de la seconde couche de commutation comprenant de l'aluminium sur la première couche de commutation permet une réduction de la tension d'électro-formation du dispositif de mémoire.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)