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1. (WO2019066828) DOUBLE SELECTOR ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES
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Pub. No.: WO/2019/066828 International Application No.: PCT/US2017/053850
Publication Date: 04.04.2019 International Filing Date: 27.09.2017
IPC:
H01L 27/06 (2006.01) ,H01L 27/102 (2006.01) ,H01L 43/08 (2006.01) ,H01L 45/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
102
including bipolar components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
MAJHI, Prashant [IN/US]; US
KARPOV, Elijah V. [US/US]; US
DOYLE, Brian S. [IE/US]; US
PILLARISETTY, Ravi [US/US]; US
SHARMA, Abhishek A. [IN/US]; US
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
MAJHI, Prashant; US
KARPOV, Elijah V.; US
DOYLE, Brian S.; US
PILLARISETTY, Ravi; US
SHARMA, Abhishek A.; US
Agent:
BRASK, Justin K.; US
AUYEUNG, Al; US
BERNADICOU, Michael A.; US
BLAIR, Steven R.; US
BLANK, Eric S.; US
COFIELD, Michael A.; US
DANSKIN, Timothy A.; US
HALEVA, Aaron S.; US
MAKI, Nathan R.; US
MARLINK, Jeffrey S.; US
MOORE, Michael S.; US
PARKER, Wesley E.; US
PUGH, Joseph A.; US
RASKIN, Vladimir; US
STRAUSS, Ryan N.; US
WANG, Yuke; US
YATES, Steven D.; US
SULLIVAN, Stephen G.; US
ROJO, Estiven; US
Priority Data:
Title (EN) DOUBLE SELECTOR ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES
(FR) ÉLÉMENT DOUBLE SÉLECTEUR DE DISPOSITIFS MÉMOIRES BIPOLAIRES BASSE TENSION
Abstract:
(EN) Embedded non-volatile memory structures having double selector elements are described. In an example, a memory device includes a word line. A double selector element is above the word line. The double selector element includes a first selector material layer, a second selector material layer different than the first selector material layer, and a conductive layer directly between the first selector material layer and the second selector material layer. A bipolar memory element is above the word line. A conductive electrode is between the double selector element and the bipolar memory element. A bit line is above the word line.
(FR) L'invention concerne des structures de mémoire non volatile intégrées comportant des éléments doubles sélecteurs. Selon un exemple, un dispositif mémoire comprend un canal mot. Un élément double sélecteur est situé au-dessus du canal mot. L'élément double sélecteur comprend une première couche de matériau sélecteur, une seconde couche de matériau sélecteur différente de la première couche de matériau sélecteur, et une couche conductrice directement entre la première couche de matériau sélecteur et la seconde couche de matériau sélecteur. Un élément mémoire bipolaire est situé au-dessus du canal mot. Une électrode conductrice est située entre l'élément double sélecteur et l'élément mémoire bipolaire. Un canal bit est situé au-dessus du canal mot.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)