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1. (WO2019066827) GRIDDED ASSIST FEATURES AND APPROACHES FOR E-BEAM DIRECT WRITE (EBDW) LITHOGRAPHY
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Pub. No.: WO/2019/066827 International Application No.: PCT/US2017/053849
Publication Date: 04.04.2019 International Filing Date: 27.09.2017
IPC:
H01L 21/027 (2006.01) ,G03F 7/20 (2006.01) ,G03F 1/20 (2012.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
20
Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
Applicants:
WALLACE, Charles H. [US/US]; US
TANDON, Shakul [IN/US]; US
TOH, Kenny K. [KE/US]; US
OGADHOH, Shem O. [KE/US]; US
PHILLIPS, Mark C. [US/US]; US
DOGRU, Selim [TR/US]; US
AULUCK, Kshitij S. [IN/US]; US
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
WALLACE, Charles H.; US
TANDON, Shakul; US
TOH, Kenny K.; US
OGADHOH, Shem O.; US
PHILLIPS, Mark C.; US
DOGRU, Selim; US
AULUCK, Kshitij S.; US
Agent:
BRASK, Justin K.; US
AUYEUNG, Al; US
BERNADICOU, Michael A.; US
BLAIR, Steven R.; US
BLANK, Eric S.; US
COFIELD, Michael A.; US
DANSKIN, Timothy A.; US
HALEVA, Aaron S.; US
MAKI, Nathan R.; US
MARLINK, Jeffrey S.; US
MOORE, Michael S.; US
PARKER, Wesley E.; US
PUGH, Joseph A.; US
RASKIN, Vladimir; US
STRAUSS, Ryan N.; US
WANG, Yuke; US
YATES, Steven D.; US
SULLIVAN, Stephen G.; US
ROJO, Estiven; US
Priority Data:
Title (EN) GRIDDED ASSIST FEATURES AND APPROACHES FOR E-BEAM DIRECT WRITE (EBDW) LITHOGRAPHY
(FR) CARACTÉRISTIQUES ET APPROCHES D'ASSISTANCE À GRILLE POUR LITHOGRAPHIE À ÉCRITURE DIRECTE PAR FAISCEAU D’ÉLECTRONS (EBDW)
Abstract:
(EN) Lithographic apparatuses suitable for, and methodologies involving, e-beam lithography such as complementary e-beam lithography (CEBL) are described. In an example, a method of performing e-beam lithography includes forming a background universal grid of sub-resolution assist e-beam exposures. The method also includes forming a plurality of features along the universal grid of sub-resolution assist e-beam exposures. The plurality of features is formed by performing resolution exposures at discrete locations along the grid of sub-resolution assist e-beam exposures.
(FR) L'invention concerne des appareils lithographiques appropriés pour, et de méthodologies concernant la lithographie par faisceau d'électrons telle que la lithographie par faisceau d’électrons complémentaire (CEBL). Dans un exemple, un procédé de réalisation d'une lithographie par faisceau d’électrons consiste à former une grille universelle d'arrière-plan d'expositions à un faisceau d’électrons à assistance de sous-résolution. Le procédé comprend également la formation d'une pluralité de caractéristiques le long de la grille universelle d'expositions au faisceau d’électrons à assistance de sous-résolution. La pluralité de caractéristiques est formée par réalisation d'expositions de résolution à des emplacements discrets le long de la grille d'expositions de faisceau d’électrons à assistance de sous-résolution.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)