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1. (WO2019066826) ASYMMETRIC SELECTOR ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/066826 International Application No.: PCT/US2017/053848
Publication Date: 04.04.2019 International Filing Date: 27.09.2017
IPC:
H01L 45/00 (2006.01) ,H01L 43/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
MAJHI, Prashant [IN/US]; US
SHARMA, Abhishek A. [IN/US]; US
KARPOV, Elijah V. [US/US]; US
PILLARISETTY, Ravi [US/US]; US
DOYLE, Brian S. [IE/US]; US
Inventors:
MAJHI, Prashant; US
SHARMA, Abhishek A.; US
KARPOV, Elijah V.; US
PILLARISETTY, Ravi; US
DOYLE, Brian S.; US
Agent:
BRASK, Justin K.; US
AUYEUNG, Al; US
BERNADICOU, Michael A.; US
BLAIR, Steven R.; US
BLANK, Eric S.; US
COFIELD, Michael A.; US
DANSKIN, Timothy A.; US
HALEVA, Aaron S.; US
MAKI, Nathan R.; US
MARLINK, Jeffrey S.; US
MOORE, Michael S.; US
PARKER, Wesley E.; US
PUGH, Joseph A.; US
RASKIN, Vladimir; US
STRAUSS, Ryan N.; US
WANG, Yuke; US
YATES, Steven D.; US
SULLIVAN, Stephen G.; US
ROJO, Estiven; US
Priority Data:
Title (EN) ASYMMETRIC SELECTOR ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES
(FR) ÉLÉMENT SÉLECTEUR ASYMÉTRIQUE DE DISPOSITIFS MÉMOIRES BIPOLAIRES BASSE TENSION
Abstract:
(EN) Embedded non-volatile memory structures having asymmetric selector elements are described. In an example, a memory device includes a word line. An asymmetric selector element is above the word line. The asymmetric selector element includes a first electrode material layer, a selector material layer on the first electrode material layer, and a second electrode material layer on the selector material layer, the second electrode material layer different in composition than the first electrode material layer. A bipolar memory element is above the word line, the bipolar memory element on the asymmetric selector element. A bit line is above the word line.
(FR) L'invention concerne des structures de mémoire non volatile intégrées comportant des éléments sélecteurs asymétriques. Selon un exemple, un dispositif mémoire comprend un canal mot. Un élément sélecteur asymétrique se trouve au-dessus du canal mot. L'élément sélecteur asymétrique comprend une première couche de matériau d'électrode, une couche de matériau sélecteur sur la première couche de matériau d'électrode, et une seconde couche de matériau d'électrode sur la couche de matériau sélecteur, la seconde couche de matériau d'électrode ayant une composition différente de celle de la première couche de matériau d'électrode. Un élément mémoire bipolaire se trouve au-dessus du canal mot, l'élément mémoire bipolaire se trouvant sur l'élément sélecteur asymétrique. Un canal bit se trouve au-dessus du canal mot.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)