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1. (WO2019066813) METHOD, DEVICE AND SYSTEM FOR PROVIDING ETCHED METALLIZATION STRUCTURES
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Pub. No.: WO/2019/066813 International Application No.: PCT/US2017/053786
Publication Date: 04.04.2019 International Filing Date: 27.09.2017
IPC:
H01L 21/768 (2006.01) ,H01L 21/306 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd. Santa Clara, California 95054, US
Inventors:
ECTON, Jeremy; US
HAEHN, Nicholas; US
OJEDA, Oscar; US
ROY, Arnab; US
WHITE, Timothy; US
NAD, Suddhasattwa; US
WANG, Hsin-Wei; US
Agent:
MILLER, Dermot G.; US
Priority Data:
Title (EN) METHOD, DEVICE AND SYSTEM FOR PROVIDING ETCHED METALLIZATION STRUCTURES
(FR) PROCÉDÉ, DISPOSITIF ET SYSTÈME POUR FOURNIR DES STRUCTURES DE MÉTALLISATION GRAVÉES
Abstract:
(EN) Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.
(FR) L'invention concerne des techniques et des mécanismes pour fournir une gravure anisotrope d'une couche de métallisation d'un substrat. Dans un mode de réalisation, la couche de métallisation comprend des grains d'un conducteur, une première taille de grain moyenne et une seconde taille de grain moyenne correspondant respectivement à une première sous-couche et à une seconde sous-couche de la couche de métallisation. La première sous-couche et la seconde sous-couche couvrent chacune au moins 5 % d'une épaisseur de la couche de métallisation. Une différence entre la première taille moyenne de grain et la seconde taille moyenne de grain est d'au moins 10 % de la première taille moyenne de grain. Dans un autre mode de réalisation, une première condition de traitement de métallisation contribue à des grains de la première sous-couche relativement grande, une condition alternative de traitement de métallisation contribuant à des grains de la seconde sous-couche étant relativement petits. Un gradient de taille de grain sur une épaisseur de la couche de métallisation facilite les processus de gravure qui sont anisotropes.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)