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1. (WO2019066729) RESISTIVE MEMORY DEVICES BASED ON METAL COORDINATED REDOX ACTIVE LIGANDS
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Pub. No.: WO/2019/066729 International Application No.: PCT/SG2018/050497
Publication Date: 04.04.2019 International Filing Date: 01.10.2018
IPC:
C07F 15/00 (2006.01) ,G11C 13/00 (2006.01) ,H01L 27/28 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
15
Compounds containing elements of the 8th Group of the Periodic System
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
Applicants:
NATIONAL UNIVERSITY OF SINGAPORE [SG/SG]; 21 Lower Kent Ridge Road, Singapore 119077, SG
INDIAN ASSOCIATION FOR THE CULTIVATION OF SCIENCE [IN/IN]; 2A & 2B Raja S C Mullick Road, Jadavpur, West Bengal, Kolkata 700032, IN
Inventors:
THIRUMALAI, Venkatesan; SG
GOSWAMI, Sreetosh; SG
PATRA, Abhijeet; SG
GOSWAMI, Sreebrata; IN
Agent:
KINNAIRD, James Welsh; SG
Priority Data:
20171103479129.09.2017IN
Title (EN) RESISTIVE MEMORY DEVICES BASED ON METAL COORDINATED REDOX ACTIVE LIGANDS
(FR) DISPOSITIFS À MÉMOIRE RÉSISTIVE BASÉS SUR DES LIGANDS À ACTIVITÉ REDOX COORDONNÉS À UN MÉTAL
Abstract:
(EN) Disclosed herein is a compound of formula (I): [M(L)n]m+ (Ay-)z (I) wherein M represents Ru, Fe, Co, Rh, Ir, Ni, Os, Cr, Cu or Mn; A represents an anionic group having a charge y, wherein y is 1 to 4, m is 1 to 4, n is 2 to 6, z is 1 to 4, and L is a ligand selected from the ligand of formula (ll)-(VII). In preferred embodiments, ligand L is 2-(phenylazo)pyridine or 2,6-bis(phenylazo))pyridine. The compound of formula (I) can be used in the formation of a resistive memory device, which is based on the low potential redox-states of metal complexes of redox active ligands. Also disclosed herein are methods of manufacturing such devices and their uses.
(FR) L'invention concerne un composé de formule (I) : [M(L)n]m+ (Ay-)z (I) dans laquelle m représente Ru, Fe, Co, Rh, Ir, Ni, Os, Cr, Cu ou Mn ; A représente un groupe anionique ayant une charge y, y étant de 1 à 4, m étant de 1 à 4, n étant de 2 à 6, z étant de 1 à 4, et L étant un ligand choisi parmi le ligand de formule (ll)- (VII). Selon des modes de réalisation préférés de la présente invention, le ligand L est 2-(phénylazo)pyridine ou 2,6-bis(phénylazo)pyridine. Le composé de formule (I) peut être utilisé dans la formation d'un dispositif à mémoire résistive, basé sur des états redox à faible potentiel de complexes métalliques de ligands à activité redox. La présente invention concerne également des procédés de fabrication de tels dispositifs et leurs utilisations.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)