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1. (WO2019066580) CHALCOGEN COMPOUND, METHOD FOR PREPARING SAME, AND THERMOELECTRIC ELEMENT COMPRISING SAME
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Pub. No.: WO/2019/066580 International Application No.: PCT/KR2018/011567
Publication Date: 04.04.2019 International Filing Date: 28.09.2018
IPC:
C30B 29/46 (2006.01) ,C30B 33/02 (2006.01) ,H01L 35/14 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
46
Sulfur-, selenium- or tellurium-containing compounds
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
02
Heat treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
14
using inorganic compositions
Applicants:
주식회사 엘지화학 LG CHEM, LTD. [KR/KR]; 서울시 영등포구 여의대로 128 128, Yeoui-daero, Yeongdeungpo-gu, Seoul 07336, KR
Inventors:
김민경 KIM, Min Kyoung; KR
민유호 MIN, Yu Ho; KR
박철희 PARK, Cheol Hee; KR
고경문 KO, Kyung Moon; KR
박치성 PARK, Chee Sung; KR
정명진 JUNG, Myung Jin; KR
Agent:
유미특허법인 YOU ME PATENT AND LAW FIRM; 서울시 강남구 테헤란로 115 115 Teheran-ro Gangnam-gu Seoul 06134, KR
Priority Data:
10-2017-012818029.09.2017KR
10-2018-011532527.09.2018KR
Title (EN) CHALCOGEN COMPOUND, METHOD FOR PREPARING SAME, AND THERMOELECTRIC ELEMENT COMPRISING SAME
(FR) COMPOSÉ CHALCOGÈNE, SON PROCÉDÉ DE PRÉPARATION ET DISPOSITIF THERMOÉLECTRIQUE LE COMPRENANT
(KO) 칼코겐 화합물, 이의 제조 방법, 및 이를 포함하는 열전소자
Abstract:
(EN) The present invention provides: a novel chalcogen compound of chemical formula 1 below, showing an excellent thermoelectric figure of merit (ZT) through increased output factor and reduced thermal conductivity; a method for preparing the same; and a thermoelectric element comprising the same. [Chemical formula 1] MyV1-ySnxSb2Tex+3 wherein V represents vacancy, M represents an alkali metal, x≥6, and 0
(FR) La présente invention concerne : un nouveau composé chalcogène de formule chimique 1 ci-dessous, montrant un excellent facteur de mérite thermoélectrique (ZT) par un facteur de sortie accru et une conductivité thermique réduite; un procédé de préparation de celui-ci; et un élément thermoélectrique le comprenant. [Formule chimique 1] MyV1-ySnxSb2Tex+3, dans laquelle V représente une lacune, M Représente un métal alcalin, x≥6, et 0
(KO) 본 발명에서는 출력인자 증가 및 열전도도 감소를 통해 우수한 열전 성능지수 (ZT)를 나타내는, 하기 화학식 1의 신규 칼코겐 화합물, 이의 제조 방법 및 이를 포함하는 열전소자가 제공된다: [화학식 1] MyV1-ySnxSb2Tex+3 상기 화학식 1에서, V는 공공 (Vacancy)이고, M은 알칼리 금속이며, x ≥6, 0
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)