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1. (WO2019066411) REFLECTIVE ELECTRODE FOR MICRO LIGHT EMITTING ELEMENT, MICRO LIGHT EMITTING ELEMENT HAVING SAME, AND METHOD FOR MANUFACTURING REFLECTIVE ELECTRODE FOR MICRO LIGHT EMITTING ELEMENT
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Pub. No.: WO/2019/066411 International Application No.: PCT/KR2018/011258
Publication Date: 04.04.2019 International Filing Date: 21.09.2018
IPC:
H01L 33/40 (2010.01) ,H01L 33/42 (2010.01) ,H01L 33/00 (2010.01) ,H01L 33/62 (2010.01) ,H01L 33/10 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
40
Materials therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
40
Materials therefor
42
Transparent materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
Applicants:
고려대학교 산학협력단 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR/KR]; 서울시 성북구 안암로 145, 고려대학교 (안암동5가) (Anam-dong 5-ga) Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, KR
Inventors:
김태근 KIM, Tae Geun; KR
오상훈 OH, Sang Hoon; KR
손경락 SON, Kyung Rock; KR
Agent:
특허법인 주원 B&IP-JOOWON PATENT AND LAW FIRM; 서울시 강남구 언주로 711, 건설회관 9층 (논현동) (Nonhyeon-dong) 9th Floor, Construction Center, Eonju-ro 711, Gangnam-gu, Seoul 06050, KR
Priority Data:
10-2017-012483527.09.2017KR
Title (EN) REFLECTIVE ELECTRODE FOR MICRO LIGHT EMITTING ELEMENT, MICRO LIGHT EMITTING ELEMENT HAVING SAME, AND METHOD FOR MANUFACTURING REFLECTIVE ELECTRODE FOR MICRO LIGHT EMITTING ELEMENT
(FR) ÉLECTRODE RÉFLÉCHISSANTE POUR MICRO-ÉLÉMENT ÉLECTROLUMINESCENT, MICRO-ÉLÉMENT ÉLECTROLUMINESCENT LA COMPRENANT, ET PROCÉDÉ DE FABRICATION D'ÉLECTRODE RÉFLÉCHISSANTE POUR MICRO-ÉLÉMENT ÉLECTROLUMINESCENT
(KO) 마이크로 발광소자용 반사전극, 이를 구비한 마이크로 발광소자 및 마이크로 발광소자용 반사전극의 제조방법
Abstract:
(EN) The present invention relates to a reflective electrode for a micro light emitting element, a micro light emitting element having the same, and a method for manufacturing a reflective electrode for a micro light emitting element. Further, the present invention comprises: a transparent electrode layer formed on a p-type semiconductor layer of a micro light emitting element; a reflective layer formed on the transparent electrode layer, wherein the reflective layer is an insulator reflecting light that is emitted from an active layer of the micro light emitting element and introduced through the transparent electrode layer, and includes a conductive filament connecting the transparent electrode layer and a p-type electrode layer therein; and the p-type electrode layer formed on the reflective layer and electrically connected to the transparent electrode layer through the conductive filament of the reflection layer. Due to these features, the present invention can provide a reflective electrode which has good conductivity and enhanced reflection efficiency compared to conventional general metal electrodes and in particular, has enhanced reflection efficiency in the ultraviolet (UV) region.
(FR) La présente invention concerne une électrode réfléchissante pour un micro-élément électroluminescent, un micro-élément électroluminescent la comprenant, et un procédé de fabrication d'une électrode réfléchissante pour un micro-élément électroluminescent. En outre, la présente invention comprend : une couche d'électrode transparente formée sur une couche semi-conductrice de type p d'un micro-élément électroluminescent ; une couche réfléchissante formée sur la couche d'électrode transparente, la couche réfléchissante étant un isolant réfléchissant la lumière qui est émise à partir d'une couche active du micro-élément électroluminescent et introduite à travers la couche d'électrode transparente, et comprend un filament conducteur connectant la couche d'électrode transparente et une couche d'électrode de type p à l'intérieur de celle-ci ; et la couche d'électrode de type p formée sur la couche réfléchissante et connectée électriquement à la couche d'électrode transparente par l'intermédiaire du filament conducteur de la couche de réflexion. Grâce à ces caractéristiques, la présente invention peut fournir une électrode réfléchissante qui présente une bonne conductivité et une efficacité de réflexion améliorée par rapport aux électrodes métalliques générales classiques et, en particulier, a une efficacité de réflexion améliorée dans la région ultraviolette (UV).
(KO) 본 발명은 마이크로 발광소자용 반사전극, 이를 구비한 마이크로 발광소자 및 마이크로 발광소자용 반사전극의 제조방법에 관한 것이다. 또한, 본 발명은 마이크로 발광소자의 p형 반도체층의 위에 형성되는 투명 전극층과, 투명 전극층의 위에 형성되고 마이크로 발광소자의 활성층으로부터 발광되어 투명 전극층을 통해 유입되는 빛을 반사하는 절연체이며 그 내부에는 상기 투명 전극층과 p형 전극층을 연결하는 전도성 필라멘트가 포함된 반사층 및 반사층의 위에 형성되고 반사층의 전도성 필라멘트를 통해 투명 전극층에 전기적으로 연결되는 p형 전극층을 구비함으로써, 종래의 일반적인 금속 전극에 비해 향상된 반사 효율을 가지면서 전도성도 우수한 반사 전극을 제공할 수 있고, 특히, 자외선(UV) 영역에서의 반사 효율을 향상시킬 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)