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1. (WO2019066354) THERMOELECTRIC DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/066354 International Application No.: PCT/KR2018/010984
Publication Date: 04.04.2019 International Filing Date: 18.09.2018
IPC:
H01L 35/32 (2006.01) ,H01L 35/04 (2006.01) ,H01L 35/02 (2006.01) ,H01L 35/14 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28
operating with Peltier or Seebeck effect only
32
characterised by the structure or configuration of the cell or thermo-couple forming the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
04
Structural details of the junction; Connections of leads
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
14
using inorganic compositions
Applicants:
엘지이노텍 주식회사 LG INNOTEK CO., LTD. [KR/KR]; 서울시 중구 후암로 98 98, Huam-ro Jung-gu Seoul 04637, KR
Inventors:
진희열 JIN, Hee Yol; KR
김종현 KIM, Jong Hyun; KR
양태수 YANG, Tae Su; KR
유영삼 YOO, Young Sam; KR
이구 LEE, Gu; KR
이윤교 LEE, Youn Gyo; KR
전계수 JUN, Kye Soo; KR
Agent:
특허법인 다나 DANA PATENT LAW FIRM; 서울시 강남구 역삼로3길 11 광성빌딩 신관4~6층 4~6th Floor, New Wing, Gwangsung Bldg. 11, Yeoksam-ro 3-gil Gangnam-gu Seoul 06242, KR
Priority Data:
10-2017-012437326.09.2017KR
10-2017-013385216.10.2017KR
Title (EN) THERMOELECTRIC DEVICE
(FR) DISPOSITIF THERMOÉLECTRIQUE
(KO) 열전 소자
Abstract:
(EN) A thermoelectric device according to one embodiment of the present invention comprises: a first substrate; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs alternately disposed on the first substrate; a second substrate disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a plurality of first electrodes disposed between the first substrate and the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, and respectively having a P-type thermoelectric leg and N-type thermoelectric leg pair disposed therein; and a plurality of second electrodes disposed between the second substrate and the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, and respectively having a P-type thermoelectric leg and N-type thermoelectric leg pair disposed therein, wherein a P-type solder layer and N-type solder layer pair and a barrier layer disposed between the P-type solder layer and N-type solder layer pair are disposed on each of the plurality of first electrodes, and a P-type solder layer and N-type solder layer pair and a barrier layer disposed between the P-type solder layer and N-type solder layer pair are disposed on each of the plurality of second electrodes.
(FR) Un dispositif thermoélectrique selon un mode de réalisation de la présente invention comprend : un premier substrat ; une pluralité de pattes thermoélectriques de type P et une pluralité de pattes thermoélectriques de type N disposées en alternance sur le premier substrat ; un second substrat disposé sur la pluralité de pattes thermoélectriques de type P et la pluralité de pattes thermoélectriques de type N ; une pluralité de premières électrodes disposées entre le premier substrat et la pluralité de pattes thermoélectriques de type P et la pluralité de pattes thermoélectriques de type N, et ayant respectivement une paire de pattes thermoélectriques de type P et de type N disposées à l'intérieur de celles-ci ; et une pluralité de secondes électrodes disposées entre le second substrat et la pluralité de pattes thermoélectriques de type P et la pluralité de pattes thermoélectriques de type N, et ayant respectivement une paire de pattes thermoélectriques de type P et de type N disposées à l'intérieur de celles-ci, une couche de soudure de type P et une paire de couches de soudure de type N et une couche barrière disposée entre la couche de soudure de type P et la paire de couches de soudure de type N étant disposées sur chacune de la pluralité de premières électrodes, et une couche de soudure de type P et une paire de couches de soudure de type N et une couche barrière disposée entre la couche de soudure de type P et la paire de couches de soudure de type N sont disposées sur chacune de la pluralité de secondes électrodes.
(KO) 본 발명의 한 실시예에 따른 열전 소자는 제1 기판, 상기 제1 기판 상에 교대로 배치되는 복수의 P형 열전 레그 및 복수의 N형 열전 레그, 상기 복수의 P형 열전 레그 및 상기 복수의 N형 열전 레그 상에 배치되는 제2 기판, 상기 제1 기판과 상기 복수의 P형 열전 레그 및 상기 복수의 N형 열전 레그 사이에 배치되며, 각각에 한 쌍의 P형 열전 레그 및 N형 열전 레그가 배치되는 복수의 제1 전극, 그리고 상기 제2 기판과 상기 복수의 P형 열전 레그 및 상기 복수의 N형 열전 레그 사이에 배치되며, 각각에 한 쌍의 P형 열전 레그 및 N형 열전 레그가 배치되는 복수의 제2 전극을 포함하며, 상기 복수의 제1 전극 각각 상에는 한 쌍의 P형 솔더층 및 N형 솔더층, 그리고 상기 한 쌍의 P형 솔더층 및 N형 솔더층 사이에 배치된 격벽층이 배치되고, 상기 복수의 제2 전극 각각 상에는 한 쌍의 P형 솔더층 및 N형 솔더층, 그리고 상기 한 쌍의 P형 솔더층 및 N형 솔더층 사이에 배치된 격벽층이 배치된다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)