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1. (WO2019066299) SHOWERHEAD AND SUBSTRATE PROCESSING APPARATUS
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Pub. No.: WO/2019/066299 International Application No.: PCT/KR2018/010493
Publication Date: 04.04.2019 International Filing Date: 07.09.2018
IPC:
H01L 21/67 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
주식회사 유진테크 EUGENE TECHNOLOGY CO., LTD. [KR/KR]; 경기도 용인시 처인구 양지면 추계로 42 42 Chugye-ro, Yangji-myeon Cheoin-gu, Yongin-si Gyeonggi-do 17156, KR
Inventors:
제성태 JE, Sung Tae; KR
박찬용 PARK, Chan Yong; KR
이재호 LEE, Jae Ho; KR
장길순 JANG, Gil Sun; KR
윤창훈 YUN, Chang Hoon; KR
임한준 LIM, Han June; KR
강우영 KANG, Woo Young; KR
Agent:
정성진 JEONG, Seong-Jin; KR
Priority Data:
10-2017-012583028.09.2017KR
Title (EN) SHOWERHEAD AND SUBSTRATE PROCESSING APPARATUS
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT ET POMME DE DOUCHE
(KO) 샤워헤드 및 기판처리장치
Abstract:
(EN) According to one embodiment of the present invention, a substrate processing apparatus comprises: a chamber in which a process for a substrate is performed; a showerhead provided inside the chamber so as to spray a reaction gas toward the substrate; and a susceptor provided below the showerhead and supporting the substrate, wherein the showerhead includes: a showerhead body having an inner space, to which a reaction gas is supplied from the outside, and a plurality of spray holes communicating with the inner space so as to spray the reaction gas therein; an inflow plate provided in the inner space so as to be capable of partitioning the inner space into an inflow space and a buffer space, and having a plurality of inflow ports communicating with the inflow space and the buffer space; and a plurality of adjusting plates, which are provided in the inflow ports and can move, and can restrict the movement of the reaction gas from the inflow space to the buffer space according to the distance from the inflow plate in accordance with the movement of the adjusting plates.
(FR) Selon un mode de réalisation de la présente invention, un appareil de traitement de substrat comprend : une chambre dans laquelle un processus pour un substrat est réalisé; une pomme de douche disposée à l'intérieur de la chambre de façon à pulvériser un gaz de réaction vers le substrat; et un suscepteur disposé au-dessous de la pomme de douche et supportant le substrat, ladite pomme de douche comprenant : un corps de pomme de douche doté d'un espace intérieur dans lequel un gaz de réaction est fourni depuis l'extérieur et une pluralité d'orifices de pulvérisation communiquant avec l'espace intérieur de façon à pulvériser le gaz de réaction à l'intérieur; une plaque d'admission disposée dans l'espace intérieur de manière à pouvoir séparer l'espace intérieur en un espace d'entrée et un espace tampon, ladite plaque bénéficiant d'une pluralité d'orifices d'entrée qui communiquent avec l'espace d'entrée et l'espace tampon; et une pluralité de plaques de réglage, qui sont disposés dans les orifices d'entrée et qui peuvent se déplacer et peuvent limiter le mouvement du gaz de réaction de l'espace d'entrée vers l'espace tampon en fonction de la distance à la plaque d'entrée déterminée par le mouvement des plaques de réglage.
(KO) 본 발명의 일 실시예에 의하면, 기판처리장치는, 기판에 대한 공정이 이루어지는 챔버; 상기 챔버의 내부에 설치되어 상기 기판을 향해 반응가스를 분사하는 샤워헤드; 그리고 상기 샤워헤드의 하부에 설치되며, 상기 기판을 지지하는 서셉터를 포함하되, 상기 샤워헤드는, 외부로부터 반응가스가 공급되는 내부공간 및 상기 내부공간과 연통되어 상기 반응가스를 분사하는 복수의 분사홀들을 가지는 샤워헤드 본체; 상기 내부공간에 설치되어 상기 내부공간을 유입공간 및 버퍼공간으로 구획가능하며, 상기 유입공간과 상기 버퍼공간을 연통하는 복수의 유입구들을 가지는 유입판; 그리고 상기 유입구들 상에 각각 설치되어 이동가능하며, 이동에 따른 상기 유입판과의 이격거리에 따라 상기 유입공간으로부터 상기 버퍼공간으로 상기 반응가스가 이동하는 것을 제한가능한 복수의 조절판들을 포함한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)