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1. (WO2019066179) VAPOR DEPOSITION PRECURSOR HAVING EXCELLENT THERMAL STABILITY AND REACTIVITY AND PREPARING METHOD THEREFOR
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Pub. No.: WO/2019/066179 International Application No.: PCT/KR2018/004929
Publication Date: 04.04.2019 International Filing Date: 27.04.2018
IPC:
C07F 15/04 (2006.01) ,C23C 16/455 (2006.01) ,C23C 16/18 (2006.01) ,H01L 21/02 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
15
Compounds containing elements of the 8th Group of the Periodic System
04
Nickel compounds
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06
characterised by the deposition of metallic material
18
from metallo-organic compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
주식회사 한솔케미칼 HANSOL CHEMICAL CO.,LTD [KR/KR]; 서울특별시 강남구 테헤란로 513, 7층,8층 7~8F, 513, Teheran-ro, Gangnam-gu Seoul 06169, KR
Inventors:
박정우 PARK, Jung Woo; KR
장동학 JANG, Donghak; KR
우경택 WOO, Kyoungtack; KR
Agent:
한양특허법인 HANYANG PATENT FIRM; 서울시 강남구 논현로38길 12, 한양빌딩 Hanyang building, 12, Nonhyeonro 38-gil, Gangnam-gu Seoul 06296, KR
Priority Data:
10-2017-012396726.09.2017KR
Title (EN) VAPOR DEPOSITION PRECURSOR HAVING EXCELLENT THERMAL STABILITY AND REACTIVITY AND PREPARING METHOD THEREFOR
(FR) PRÉCURSEUR DE DÉPÔT EN PHASE VAPEUR PRÉSENTANT UNE EXCELLENTE STABILITÉ THERMIQUE ET UNE EXCELLENTE RÉACTIVITÉ ET PROCÉDÉ DE PRÉPARATION CORRESPONDANT
(KO) 열적 안정성 및 반응성이 우수한 기상 증착 전구체 및 이의 제조방법
Abstract:
(EN) The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition and, specifically, to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent thermal stability and reactivity, and to a preparing method therefor.
(FR) La présente invention porte sur un composé de dépôt en phase vapeur approprié pour un dépôt de film mince par dépôt en phase vapeur et, plus précisément, sur des précurseurs de nickel et de cobalt pouvant être appliqués à un dépôt de couche atomique (ALD) ou à un dépôt chimique en phase vapeur (CVD) et présentant une excellente stabilité thermique et une excellente réactivité, ainsi que sur un procédé de préparation correspondant.
(KO) 본 발명은 기상 증착을 통하여 박막 증착이 가능한 기상 증착 화합물에 관한 것으로서, 구체적으로는 원자층 증착법(Atomic Layer Deposition, ALD) 또는 화학 기상 증착법(Chemical Vapor Deposition, CVD)에 적용가능하고 열적 안정성 및 반응성이 우수한 니켈 및 코발트 전구체 및 이의 제조방법에 관한 것이다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)