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1. (WO2019066145) GALLIUM NITRIDE-BASED SENSOR HAVING HEATER STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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Pub. No.: WO/2019/066145 International Application No.: PCT/KR2017/014506
Publication Date: 04.04.2019 International Filing Date: 12.12.2017
IPC:
G01N 27/12 (2006.01) ,G01N 27/14 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27
Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
02
by investigating impedance
04
by investigating resistance
12
of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27
Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
02
by investigating impedance
04
by investigating resistance
14
of an electrically-heated body in dependence upon change of temperature
Applicants:
KOREA ADVANCED NANO FAB CENTER [KR/KR]; (lui-dong) 109, Gwanggyo-ro, Yeongtong-gu Suwon-si Gyeonggi-do 16229, KR
Inventors:
PARK, Kyungho; KR
CHO, Chuyoung; KR
PARK, Hyeong Ho; KR
KOH, Yu Min; KR
Agent:
LEE, Joon Sung; KR
Priority Data:
10-2017-012425126.09.2017KR
Title (EN) GALLIUM NITRIDE-BASED SENSOR HAVING HEATER STRUCTURE AND METHOD OF MANUFACTURING THE SAME
(FR) CAPTEUR À BASE DE NITRURE DE GALLIUM POSSÉDANT UNE STRUCTURE CHAUFFANTE ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an AlxGa1-xN layer, an InxAl1-xN layer and an InxAlyGa1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the AlxGa1-xN layer, the InxAl1-xN layer and the InxAlyGa1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.
(FR) L'invention concerne un capteur à base de nitrure de gallium possédant une structure chauffante et son procédé de fabrication, le procédé comprenant les étapes consistant à faire croître une couche de GaN de type n ou de type p sur un substrat, à faire croître une couche barrière sur la couche de GaN de type n ou de type p, à faire croître séquentiellement une couche d'u-GaN et une couche sélectionnée parmi une couche d'AlxGa1-xN, une couche d'InxAl1-xN et une couche d'InxAlyGa1-x-yN sur la couche barrière, à former un motif sur la couche de GaN de type n ou de type p pour former une électrode, à former l'électrode le long du motif formé sur la couche de GaN de type n ou de type p, et à former une couche de matériau de détection sur la couche sélectionnée parmi la couche d'AlxGa1-xN, la couche d'InxAl1-xN et la couche d'InxAlyGa1-x-yN, un capteur HEMT ou un capteur à diode Schottky pouvant être chauffé à l'aide d'une couche de n-GaN (ou p-GaN), ce qui permet d'augmenter la sensibilité du capteur et de réduire le temps de restauration.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)