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1. (WO2019066136) SEMICONDUCTOR FACTORY GRID BEAM STRUCTURE AND METHOD FOR CONSTRUCTING SAME
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Pub. No.: WO/2019/066136 International Application No.: PCT/KR2017/013496
Publication Date: 04.04.2019 International Filing Date: 24.11.2017
IPC:
E04B 5/04 (2006.01) ,E04B 5/08 (2006.01)
E FIXED CONSTRUCTIONS
04
BUILDING
B
GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
5
Floors; Floor construction with regard to insulation; Connections specially adapted therefor
02
Load-carrying floor structures formed substantially of prefabricated units
04
with beams of concrete or other stone-like material, e.g. asbestos cement
E FIXED CONSTRUCTIONS
04
BUILDING
B
GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
5
Floors; Floor construction with regard to insulation; Connections specially adapted therefor
02
Load-carrying floor structures formed substantially of prefabricated units
08
assembled of block-shaped elements, e.g. hollow stones
Applicants:
삼성물산 주식회사 SAMSUNG C&T CORPORATION [KR/KR]; 서울시 송파구 올림픽로35길 123 123, Olympic-ro 35-gil Songpa-gu Seoul 05510, KR
Inventors:
유영기 LEW, Young Kee; KR
김용구 KIM, Yong Ku; KR
노현섭 NOH, Hyun Sup; KR
안상경 AHN, Sang Kyung; KR
이난희 LEE, Nan Hee; KR
이은석 LEE, Eun Seok; KR
전병갑 JEON, Byung Kap; KR
정재은 JUNG, Jae Eun; KR
Agent:
이은철 LEE, Un Cheol; KR
Priority Data:
10-2017-012655428.09.2017KR
Title (EN) SEMICONDUCTOR FACTORY GRID BEAM STRUCTURE AND METHOD FOR CONSTRUCTING SAME
(FR) STRUCTURE DE POUTRES EN GRILLE D'USINE DE SEMICONDUCTEURS ET SON PROCÉDÉ DE CONSTRUCTION
(KO) 반도체공장의 격자보 구조물 및 이의 시공 방법
Abstract:
(EN) The purpose is to provide a semiconductor factory grid beam structure and a method for constructing same. The semiconductor factory grid beam structure is installed inside a semiconductor factory and comprises: posts which are vertical columns erected in the longitudinal and the transverse direction at predetermined intervals; unidirectional beams cradled on and fixed to the upper portions of two adjacent posts, thereby connecting the upper portions of the posts in the transverse direction; and rectangular grid beams installed so as to fill the rectangular horizontal area formed and surrounded by the unidirectional beams. Protruding stepped portions are formed on the side surfaces of the unidirectional beams, and recessed stepped portions are formed on the side surfaces of the grid beams. The bottom surfaces of the stepped portions on the side surfaces of the grid beams are cradled on the upper surfaces of the stepped portions on the side surfaces of the respective unidirectional beams, thereby installing the grid beams. Mortar is injected into a gap between the end portions of two unidirectional beams joining at the upper portions of the posts and into a gap between the side surfaces of the unidirectional beams and side surfaces of the grid beams. Accordingly, the end portions of the unidirectional beams are bonded and fixed to each other, and the unidirectional beams and the grid beams are bonded and fixed to each other, thereby providing a means capable of completing the coupling in a much shorter time than in the case of pouring and curing concrete. In addition, the structure is large enough to endure vibrations, thus the coupling between the grid beams, the unidirectional beams, and the posts can become more robust.
(FR) L'invention a pour objet de réaliser une structure de poutres en grille d'usine de semiconducteurs et son procédé de construction. La structure de poutres en grille d'usine de semiconducteurs est installée à l'intérieur d'une usine de semiconducteurs et comprend : des montants qui sont des colonnes verticales érigées dans des directions longitudinale et transversale à des intervalles prédéterminés; des poutres unidirectionnelles nichées sur des portions supérieures de deux montants adjacents et fixées à celles-ci, reliant ainsi les portions supérieures des montants dans la direction transversale; et des poutres de grille rectangulaires installées de façon à remplir la zone horizontale rectangulaire formée et entourée par les poutres unidirectionnelles. Des portions étagées sont formées sur des surfaces latérales des poutres unidirectionnelles respectives de manière à faire saillie, et des portions étagées sont formées sur des surfaces latérales des poutres de grille respectives de manière à être en retrait. Des surfaces inférieures des portions étagées sur les surfaces latérales de poutres de grille respectives sont nichées sur des surfaces supérieures des portions étagées sur les surfaces latérales des poutres unidirectionnelles respectives, ce qui permet d'installer les poutres de grille. Du mortier est injecté dans un espace entre les portions d'extrémité de deux poutres unidirectionnelles qui se joignent au niveau des portions supérieures des montants et dans un espace entre des surfaces latérales des poutres unidirectionnelles et des surfaces latérales des poutres de grille. Par conséquent, les portions d'extrémité respectives des poutres unidirectionnelles sont liées et fixées les unes aux autres, et les poutres unidirectionnelles ainsi que les poutres de grille sont liées et fixées les unes aux autres, ce qui permet d'obtenir un moyen capable de mener à bien le couplage en un temps beaucoup plus court que dans le cas du coulage et du durcissement du béton. De plus, la structure est suffisamment grande pour supporter des vibrations de telle sorte que le couplage entre les poutres de grille, les poutres unidirectionnelles et les montants peut devenir plus robuste.
(KO) 반도체 공장 내부에 설치되며, 일정 간격을 따라 종횡으로 세워지는 수직 기둥인 샛기둥과, 인접되는 두 개의 샛기둥 상부에 거치되어 고정됨으로써 샛기둥 상부를 가로질러 연결시키는 일 방향 보와, 일 방향 보로 둘러싸여 형성되는 장방형의 수평면적을 채우는 형태로 설치되는 장방형의 격자보로 구성되되, 일 방향 보의 측면에는 돌출 형태의 단차가 형성되고 격자보의 측면에는 함몰 형태의 단차가 형성되어 격자보 측면 단차의 저면이 일 방향 보 측면 단차의 상면에 거치되는 형태로 격자보가 설치되는 반도체공장의 격자보 구조물로서, 상기 샛기둥 상부에서 만나는 두 개의 일 방향 보 단부 사이의 틈과, 일 방향 보의 측면과 격자보의 측면 사이의 틈에는 몰탈이 주입됨으로써, 일 방향 보가 단부끼리 접합되어 고정되고, 일 방향 보와 격자보가 서로 접합 고정되는 것을 특징으로 함으로써, 콘크리트 타설 및 양생에 소요되는 시간보다 훨씬 신속하게 결합이 이루어질 수 있는 수단이 갖추어지고, 또한 구조물이 진동에 견딜 수 있게 대형화된 만큼 격자보와 일 방향 보 및 샛기둥 간의 결합도 더욱 견고해질 수 있는 구조를 가질 수 있는 반도체공장의 격자보 구조물 및 이의 시공 방법을 제공하고자 한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)