Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019066033) PLASMA PROCESSING DEVICE MEMBER AND PLASMA PROCESSING DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/066033 International Application No.: PCT/JP2018/036464
Publication Date: 04.04.2019 International Filing Date: 28.09.2018
IPC:
H01L 21/3065 (2006.01) ,C04B 35/505 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
50
based on rare earth compounds
505
based on yttrium oxide
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants:
京セラ株式会社 KYOCERA CORPORATION [JP/JP]; 京都府京都市伏見区竹田鳥羽殿町6番地 6, Takeda Tobadono-cho, Fushimi-ku, Kyoto-shi, Kyoto 6128501, JP
Inventors:
田中 万平 TANAKA, Manpei; JP
Priority Data:
2017-18788628.09.2017JP
Title (EN) PLASMA PROCESSING DEVICE MEMBER AND PLASMA PROCESSING DEVICE
(FR) ÉLÉMENT DE DE DISPOSITIF DE TRAITEMENT AU PLASMA ET DISPOSITIF DE TRAITEMENT AU PLASMA
(JA) プラズマ処理装置用部材およびプラズマ処理装置
Abstract:
(EN) This plasma processing device member comprises an yttrium oxide sintered body containing 98% by mass or more of yttrium oxide and having a plurality of open pores. When L1 is the mean value of the distance between the centroids of the open pores that are adjacent to one another, L1 is 50 μm or longer. In addition, this plasma processing device comprises a plasma processing device member and a plasma generator.
(FR) L'invention concerne un élément de dispositif de traitement au plasma comprenant un corps fritté d'oxyde d'yttrium contenant au moins 98 % en masse d'oxyde d'yttrium et ayant une pluralité de pores ouverts. Lorsque L1 est la valeur moyenne de la distance entre les centroïdes des pores ouverts qui sont adjacents les uns aux autres, L1 est d'au moins 50 µm. De plus, ce dispositif de traitement au plasma comprend un élément de dispositif de traitement au plasma et un générateur de plasma.
(JA) 本開示のプラズマ処理装置用部材は、酸化イットリウムを98質量%以上含有し、複数の開気孔を有する酸化イットリウム質焼結体からなるプラズマ処理装置用部材であって、隣り合う前記開気孔の重心間距離の平均値をL1としたとき、前記L1は50μm以上である。また本開示のプラズマ処理装置は、プラズマ処理装置用部材と、プラズマ発生装置とを備えている。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)