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1. (WO2019065710) ELECTROSTATIC CHUCK DEVICE
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Pub. No.: WO/2019/065710 International Application No.: PCT/JP2018/035627
Publication Date: 04.04.2019 International Filing Date: 26.09.2018
IPC:
H01L 21/683 (2006.01) ,H01L 21/3065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
住友大阪セメント株式会社 SUMITOMO OSAKA CEMENT CO., LTD. [JP/JP]; 東京都千代田区六番町6番地28 6-28, Rokuban-cho, Chiyoda-ku, Tokyo 1028465, JP
Inventors:
小坂井 守 KOSAKAI Mamoru; JP
尾崎 雅樹 OZAKI Masaki; JP
前田 佳祐 MAEDA Keisuke; JP
Agent:
西澤 和純 NISHIZAWA Kazuyoshi; JP
佐藤 彰雄 SATO Akio; JP
萩原 綾夏 HAGIWARA Ayaka; JP
Priority Data:
2017-18971829.09.2017JP
2017-18971929.09.2017JP
Title (EN) ELECTROSTATIC CHUCK DEVICE
(FR) DISPOSITIF DE PORTE-SUBSTRAT ÉLECTROSTATIQUE
(JA) 静電チャック装置
Abstract:
(EN) This electrostatic chuck device is provided with: an electrostatic chuck part that has a sample placement surface on which a sample is placed, and that has a first electrode for electrostatic attraction; a cooling base part that cools the electrostatic chuck part, and that is positioned on the opposite side of the electrostatic chuck part from the sample placement surface; and an adhesive layer that bonds the electrostatic chuck part and the cooling base part. The electrostatic chuck part has recesses and protrusions on the adhesive layer side, and the surface resistance value of the first electrode is greater than 1.0 Ω/□ and lower than 1.0x1010 Ω/□.
(FR) Le dispositif de porte-substrat électrostatique selon l'invention comporte: une partie porte-substrat électrostatique possédant une première électrode pour attraction électrostatique et possédant également une surface destinée à supporter un échantillon; une partie base de refroidissement pour refroidir la partie porte-substrat électrostatique située à l'opposé de la surface destinée à supporter un échantillon de la partie porte-substrat électrostatique; et une couche adhésive pour joindre la partie porte-substrat électrostatique et la partie base de refroidissement. La partie porte-substrat électrostatique est en relief côté couche adhésive, et la valeur de résistance superficielle de la première électrode est supérieure à 1,0Ω/□ et inférieure à 1,0X1010Ω/□.
(JA) 静電チャック装置は、試料を載置する試料載置面を有するとともに静電吸着用の第1の電極を有する静電チャック部と、静電チャック部に対し試料載置面とは反対側に載置され静電チャック部を冷却する冷却ベース部と、静電チャック部と前記冷却ベース部とを接着する接着層と、を備え、静電チャック部は、接着層の側に凹凸を有しており、第1の電極の面抵抗値が1.0Ω/□よりも高く1.0×1010Ω/□よりも低い。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)