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1. (WO2019065689) BASE SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD FOR MANUFACTURING BASE SUBSTRATE
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Pub. No.: WO/2019/065689 International Application No.: PCT/JP2018/035586
Publication Date: 04.04.2019 International Filing Date: 26.09.2018
IPC:
C30B 29/38 (2006.01) ,H01L 21/205 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
38
Nitrides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
日本碍子株式会社 NGK INSULATORS, LTD. [JP/JP]; 愛知県名古屋市瑞穂区須田町2番56号 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi 4678530, JP
Inventors:
後藤 万佐司 GOTO Masashi; JP
坂井 正宏 SAKAI Masahiro; JP
大上 翔平 OUE Shohei; JP
吉野 隆史 YOSHINO Takashi; JP
Agent:
細田 益稔 HOSODA Masutoshi; JP
青木 純雄 AOKI Sumio; JP
Priority Data:
2017-18641127.09.2017JP
Title (EN) BASE SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD FOR MANUFACTURING BASE SUBSTRATE
(FR) SUBSTRAT DE BASE, ÉLÉMENT FONCTIONNEL ET PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE BASE
(JA) 下地基板、機能素子および下地基板の製造方法
Abstract:
(EN) Provided is a base substrate for growing a group 13 element nitride crystal layer on a crystal growing surface of a base crystal layer, wherein the base substrate has a structure which can further reduce defects or cracks in the group 13 element nitride crystal layer. A base substrate 6 comprises: a support substrate 1 made of aluminum oxide; and a base crystal layer 2A, which is provided on a main surface 1a of the support substrate 1, is made of a group 13 element nitride crystal, and has a crystal growing surface 2a. At least one of a product of reaction between the material of the support substrate and the group 13 element nitride crystal and a group 13 metal, 4A, is present between the support substrate 1 and the base crystal layer 2A. The product of reaction includes at least aluminum and a group 13 element.
(FR) L'invention concerne un substrat de base pour la croissance d'une couche cristalline de nitrure d'élément du groupe 13 sur une surface de croissance cristalline d'une couche cristalline de base, le substrat de base présentant une structure qui peut en outre réduire des défauts ou des fissures dans la couche cristalline de nitrure d'élément du groupe 13. L'invention concerne un substrat de base 6 comprenant : un substrat de support 1 en oxyde d'aluminium ; et une couche cristalline de base 2A qui est disposée sur une surface principale 1a du substrat de support 1, qui est constituée d'un cristal d'un nitrure d'un élément du groupe 13 et qui possède une surface 2a de croissance cristalline. Au moins l'un d'un produit de réaction entre le matériau du substrat de support et le cristal de nitrure d'élément du groupe 13 et un métal du groupe 13, 4A, est présent entre le substrat de support 1 et la couche cristalline de base 2A. Le produit de réaction comprend au moins de l'aluminium et un élément du groupe 13.
(JA) 下地結晶層の結晶育成面上に13族元素窒化物結晶層を育成するための下地基板において、13族元素窒化物結晶層における欠陥やクラックを更に低減できる構造を提供する。 下地基板6は、酸化アルミニウムからなる支持基板1、支持基板1の主面1a上に設けられ、および13族元素窒化物結晶からなり、結晶育成面2aを有する下地結晶層2Aを備える。支持基板1と下地結晶層2Aとの間に、支持基板の材質と13族元素窒化物結晶との反応物と13族金属との少なくとも一方4Aが存在している。反応物が、少なくともアルミニウムおよび13族元素を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)