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1. (WO2019065668) HIGH FREQUENCY MODULE AND COMMUNICATION DEVICE
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Pub. No.: WO/2019/065668 International Application No.: PCT/JP2018/035554
Publication Date: 04.04.2019 International Filing Date: 26.09.2018
IPC:
H04B 1/38 (2015.01) ,H01L 21/3205 (2006.01) ,H01L 21/768 (2006.01) ,H01L 21/822 (2006.01) ,H01L 23/12 (2006.01) ,H01L 23/14 (2006.01) ,H01L 23/522 (2006.01) ,H01L 27/04 (2006.01) ,H05K 3/46 (2006.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
B
TRANSMISSION
1
Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
38
Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
14
characterised by the material or its electrical properties
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
46
Manufacturing multi-layer circuits
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
若木 謙 WAKAKI Ken; JP
Agent:
特許業務法人 楓国際特許事務所 KAEDE PATENT ATTORNEYS' OFFICE; 大阪府大阪市中央区農人橋1丁目4番34号 1-4-34, Noninbashi, Chuo-ku, Osaka-shi, Osaka 5400011, JP
Priority Data:
2017-19013029.09.2017JP
Title (EN) HIGH FREQUENCY MODULE AND COMMUNICATION DEVICE
(FR) MODULE HAUTE FRÉQUENCE ET DISPOSITIF DE COMMUNICATION
(JA) 高周波モジュールおよび通信装置
Abstract:
(EN) This high frequency module (10) is provided with an IC chip (20) and mounted components (41, 42, 43) which are mounted on the IC chip (20). The IC chip (20) comprises: a core substrate (21) that is formed of a semiconductor and has a first main surface (211) and a second main surface (212), each of which is on the reverse sides of the other; and a metal wiring layer (22) that is formed on the first main surface (211) of the core substrate (21) and has a contact surface which is in contact with the first main surface (211) and a third main surface (221) which is on the reverse side of the contact surface. The mounted components (41, 42, 43) are mounted on the third main surface (221) side.
(FR) Ce module haute fréquence (10) est pourvu d'une puce à circuit intégré (20) et de composants montés (41, 42, 43) qui sont montés sur la puce à circuit intégré (20). La puce à circuit intégré (20) comprend : un substrat central (21) qui est formé d'un semi-conducteur et a une première surface principale (211) et une seconde surface principale (212), dont chacune est sur le côté opposé de l'autre; et une couche de câblage métallique (22) qui est formée sur la première surface principale (211) du substrat central (21) et a une surface de contact qui est en contact avec la première surface principale (211) et une troisième surface principale (221) qui est sur le côté opposé de la surface de contact. Les composants montés (41, 42, 43) sont montés sur le coté de la troisième surface principale (221).
(JA) 高周波モジュール(10)は、ICチップ(20)と、ICチップ(20)に実装された実装部品(41,42,43)と、を備える。ICチップ(20)は、互いに対向する第1主面(211)と第2主面(212)とを有する半導体からなるコア基板(21)と、コア基板(21)の第1主面(211)に形成され、第1主面(211)への当接面と該当接面に対向する第3主面(221)を有するメタル配線層(22)とを備える。実装部品(41,42,43)は、第3主面(221)側に実装されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)