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1. (WO2019065666) ACOUSTIC WAVE DEVICE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/065666 International Application No.: PCT/JP2018/035552
Publication Date: 04.04.2019 International Filing Date: 26.09.2018
IPC:
H03H 9/25 (2006.01) ,H01L 41/047 (2006.01) ,H01L 41/08 (2006.01) ,H01L 41/09 (2006.01) ,H03H 9/145 (2006.01) ,H03H 9/64 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25
Constructional features of resonators using surface acoustic waves
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
04
of piezo-electric or electrostrictive elements
047
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
09
with electrical input and mechanical output
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
125
Driving means, e.g. electrodes, coils
145
for networks using surface acoustic waves
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46
Filters
64
using surface acoustic waves
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
大村 正志 OMURA, Masashi; --
Agent:
特許業務法人北斗特許事務所 HOKUTO PATENT ATTORNEYS OFFICE; 大阪府大阪市北区梅田一丁目12‐17梅田スクエアビル Umeda Square Bldg., 12-17, Umeda 1-chome, Kita-ku, Osaka-shi, Osaka 5300001, JP
Priority Data:
2017-18673427.09.2017JP
Title (EN) ACOUSTIC WAVE DEVICE
(FR) DISPOSITIF À ONDES ACOUSTIQUES
(JA) 弾性波装置
Abstract:
(EN) The present invention further enhances resistance to electric power while suppressing deterioration of frequency characteristics. A first IDT electrode (7A) and a second IDT electrode (7B) are connected in series to each other via a common bus bar (70) shared by these electrodes. In each of a first acoustic impedance layer (4A) and a second acoustic impedance layer (4B), at least one high-acoustic impedance layer (41) and at least one low-acoustic impedance layer are conductive layers. At least a portion of the conductive layers of the first acoustic impedance layer (4A) and at least a portion of the conductive layers of the second acoustic impedance layer (4B) do not overlap with the common bus bar (70) in a plan view from the thickness direction of a piezoelectric layer (5). The conductive layers of the first acoustic impedance layer (4A) are electrically insulated from the conductive layers of the second acoustic impedance layer (4B).
(FR) La présente invention permet d'améliorer davantage la résistance à l'énergie électrique tout en supprimant la détérioration des caractéristiques de fréquence. Une première électrode IDT (7A) et une seconde électrode IDT (7B) sont connectées en série l'une à l'autre par l'intermédiaire d'une barre omnibus commune (70) partagée par ces électrodes. Dans chacune d'une première couche à impédance acoustique (4A) et d'une seconde couche à impédance acoustique (4B), au moins une couche à haute impédance acoustique (41) et au moins une couche à faible impédance acoustique sont des couches conductrices. Au moins une partie des couches conductrices de la première couche à impédance acoustique (4A) et au moins une partie des couches conductrices de la seconde couche à impédance acoustique (4B) ne se chevauchent pas avec la barre omnibus commune (70) en vue en plan à partir de la direction de l'épaisseur d'une couche piézoélectrique (5). Les couches conductrices de la première couche à impédance acoustique (4A) sont isolées électriquement des couches conductrices de la seconde couche à impédance acoustique (4B).
(JA) 周波数特性の低下を抑制しつつ耐電力性をより高める。第1IDT電極(7A)及び第2IDT電極(7B)は、互いに共有している共通バスバー(70)により互いに直列接続されている。第1音響インピーダンス層(4A)及び第2音響インピーダンス層(4B)の各々について、少なくとも1つの高音響インピーダンス層(41)及び少なくとも1つの低音響インピーダンス層の少なくとも1つが導電層である。第1音響インピーダンス層(4A)における導電層の少なくとも一部と第2音響インピーダンス層(4B)における導電層の少なくとも一部とが、圧電体層(5)の厚さ方向からの平面視において共通バスバー(70)と重複していない。第1音響インピーダンス層(4A)における導電層と第2音響インピーダンス層(4B)における導電層とが電気的に絶縁されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)