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1. (WO2019065561) FIELD EFFECT-TRANSISTOR, METHOD FOR MANUFACTURING SAME, WIRELESS COMMUNICATION DEVICE USING SAME, AND PRODUCT TAG
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/065561 International Application No.: PCT/JP2018/035275
Publication Date: 04.04.2019 International Filing Date: 25.09.2018
IPC:
H01L 29/786 (2006.01) ,C08G 77/42 (2006.01) ,C08G 77/58 (2006.01) ,C08K 3/00 (2018.01) ,C08K 3/22 (2006.01) ,C08L 83/04 (2006.01) ,C08L 101/00 (2006.01) ,H01L 51/05 (2006.01) ,H01L 51/30 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
G
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
77
Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
42
Block- or graft-polymers containing polysiloxane sequences
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
G
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
77
Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
48
in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
58
Metal-containing linkages
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
K
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
3
Use of inorganic ingredients
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
K
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
3
Use of inorganic ingredients
18
Oxygen-containing compounds, e.g. metal carbonyls
20
Oxides; Hydroxides
22
of metals
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04
Polysiloxanes
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
101
Compositions of unspecified macromolecular compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30
Selection of materials
Applicants:
東レ株式会社 TORAY INDUSTRIES, INC. [JP/JP]; 東京都中央区日本橋室町2丁目1番1号 1-1, Nihonbashi-Muromachi 2-chome, Chuo-ku, Tokyo 1038666, JP
Inventors:
崎井大輔 SAKII, Daisuke; JP
村瀬清一郎 MURASE, Seiichiro; JP
脇田潤史 WAKITA, Junji; JP
Priority Data:
2017-18990029.09.2017JP
Title (EN) FIELD EFFECT-TRANSISTOR, METHOD FOR MANUFACTURING SAME, WIRELESS COMMUNICATION DEVICE USING SAME, AND PRODUCT TAG
(FR) TRANSISTOR À EFFET DE CHAMP, SON PROCÉDÉ DE FABRICATION, DISPOSITIF DE COMMUNICATION SANS FIL L'UTILISANT ET ÉTIQUETTE DE PRODUIT
(JA) 電界効果型トランジスタ、その製造方法、それを用いた無線通信装置および商品タグ
Abstract:
(EN) The field-effect transistor is provided with at least: a substrate; a source electrode, a drain electrode and a gate electrode; a semiconductor layer that contacts the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode. The semiconductor layer contains carbon nanotubes, and the gate insulating layer contains a polymer in which inorganic particles are bonded. Provided are a field effect-transistor which has reduced leak current and enables uniform coating of a semiconductor solution, and a method for manufacturing the same.
(FR) L'invention concerne un transistor à effet de champ comprenant au moins : un substrat ; une électrode de source, une électrode de drain et une électrode de grille ; une couche semi-conductrice qui entre en contact avec l'électrode de source et l'électrode de drain ; et une couche d'isolation de grille qui isole la couche semi-conductrice de l'électrode de grille. La couche semi-conductrice contient des nanotubes de carbone, et la couche d'isolation de grille contient un polymère dans lequel des particules inorganiques sont liées. L'invention concerne un transistor à effet de champ qui présente un courant de fuite réduit et permet un revêtement uniforme d'une solution semi-conductrice, et son procédé de fabrication.
(JA) 少なくとも、基板と、ソース電極、ドレイン電極およびゲート電極と、前記ソース電極およびドレイン電極に接する半導体層と、前記半導体層を前記ゲート電極と絶縁するゲート絶縁層と、を備えた電界効果型トランジスタであって、前記半導体層が、カーボンナノチューブを含有し、前記ゲート絶縁層が、無機粒子が結合したポリマーを含有する電界効果型トランジスタ。リーク電流が低減され、さらに半導体溶液の均一塗布が可能となる電界効果型トランジスタと、その製造方法を提供する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)