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1. (WO2019065544) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
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Pub. No.: WO/2019/065544 International Application No.: PCT/JP2018/035216
Publication Date: 04.04.2019 International Filing Date: 21.09.2018
IPC:
H01L 21/28 (2006.01) ,C23C 16/56 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
56
After-treatment
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants:
株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区神田鍜治町3丁目4番地 3-4, KandaKaji-cho, Chiyoda-ku, Tokyo 1010045, JP
Inventors:
中山 雅則 NAKAYAMA, Masanori; JP
舟木 克典 FUNAKI, Katsunori; JP
上田 立志 UEDA, Tatsushi; JP
坪田 康寿 TSUBOTA, Yasutoshi; JP
竹島 雄一郎 TAKESHIMA, Yuichiro; JP
井川 博登 IGAWA, Hiroto; JP
山角 宥貴 YAMAKADO, Yuki; JP
Agent:
特許業務法人太陽国際特許事務所 TAIYO, NAKAJIMA & KATO; 東京都新宿区新宿4丁目3番17号 3-17, Shinjuku 4-chome, Shinjuku-ku, Tokyo 1600022, JP
Priority Data:
2017-18799428.09.2017JP
Title (EN) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
(FR) PROCÉDÉ DE PRODUCTION DE DISPOSITIF SEMI-CONDUCTEUR, APPAREIL DE TRAITEMENT DE SUBSTRAT ET SUPPORT D’ENREGISTREMENT
(JA) 半導体装置の製造方法、基板処理装置及び記録媒体
Abstract:
(EN) Provided is a technique for modifying a tungsten film formed on a substrate so that the sheet resistance thereof is considerably reduced, thereby forming a tungsten film which has excellent characteristics and is applicable to electrodes and the like. A method for producing a semiconductor device according to the present invention comprises: a step for carrying a substrate, on the surface of which a tungsten film has been formed, into a processing chamber; a step for producing a reactive species by plasma-exciting a processing gas that contains hydrogen and oxygen; and a step for modifying the tungsten film by supplying the reactive species to the substrate. In the step for modifying the tungsten film, the tungsten film is modified so that the crystal grain size of tungsten that constitutes the tungsten film becomes larger than the crystal grain size before the modification step.
(FR) L’invention concerne une technique de modification d’une pellicule de tungstène formée sur un substrat de sorte que sa résistance de feuille soit considérablement réduite, formant ainsi une pellicule de tungstène dont les caractéristiques sont excellentes et qui est applicable à des électrodes et similaire. Un procédé de production d’un dispositif semi-conducteur selon la présente invention consiste : en une étape de transport d’un substrat, sur la surface duquel a été formée une pellicule de tungstène, dans une chambre de traitement ; en une étape de production d’une espèce réactive par excitation par plasma d’un gaz de traitement qui contient de l’hydrogène et de l’oxygène ; et en une étape de modification de la pellicule de tungstène en fournissant l’espèce réactive au substrat. Lors de l’étape de modification de la pellicule de tungstène, la pellicule de tungstène est modifiée de sorte que la taille de grains de cristal de tungstène qui constitue la pellicule de tungstène devient supérieure à la taille de grains de cristal avant l’étape de modification.
(JA) 基板上に形成されたタングステン膜のシート抵抗値を大幅に低減するように改質し、電極等に適用される優れた特性を有するタングステン膜を形成する技術を提供する。表面にタングステン膜が形成された基板を処理室内に搬入する工程と、水素及び酸素を含有する処理ガスをプラズマ励起することにより反応種を生成する工程と、反応種を基板に供給してタングステン膜を改質する工程と、を有し、タングステン膜を改質する工程では、タングステン膜を構成するタングステンの結晶粒径が当該工程を行う前よりも大きくなるようにタングステン膜を改質する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)