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1. (WO2019065502) RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/065502 International Application No.: PCT/JP2018/035070
Publication Date: 04.04.2019 International Filing Date: 21.09.2018
IPC:
G03F 7/004 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
東京応化工業株式会社 TOKYO OHKA KOGYO CO., LTD. [JP/JP]; 神奈川県川崎市中原区中丸子150番地 150, Nakamaruko, Nakahara-ku, Kawasaki-shi, Kanagawa 2110012, JP
Inventors:
長峰 高志 NAGAMINE Takashi; JP
海保 貴昭 KAIHO Takaaki; JP
中村 剛 NAKAMURA Tsuyoshi; KR
Agent:
棚井 澄雄 TANAI Sumio; JP
松本 将尚 MATSUMOTO Masanao; JP
宮本 龍 MIYAMOTO Ryu; JP
飯田 雅人 IIDA Masato; JP
Priority Data:
2017-18904228.09.2017JP
Title (EN) RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD
(FR) COMPOSITION DE RÉSERVE ET PROCÉDÉ DE FORMATION DE MOTIFS DE RÉSERVE
(JA) レジスト組成物及びレジストパターン形成方法
Abstract:
(EN) A resist composition containing a base component (A) of which the solubility in a developing solution can be altered by the action of an acid, and also containing a compound (B1) represented by general formula (b1) is employed. In the formula, Rb1 represents a monovalent hydrocarbon group having a steroid backbone and having 17 to 50 carbon atoms. Provided that the hydrocarbon group may contain a hetero atom. Yb1 represents a bivalent linking group containing at least one functional group selected from the group consisting of a carboxylic acid ester group, an ether group, a carbonic acid ester group, a carbonyl group and an amide group, or a single bond. Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond. One of Rf1 and Rf2 represents a hydrogen atom, and the other represents a fluorine atom. m represents an integer of 1 or more, and Mm+ represents a m-valent organic cation.
(FR) La présente invention concerne une composition de réserve contenant un constituant de base (A) dont la solubilité dans une solution de développement peut être modifiée par l'action d'un acide, et contenant également un composé (B1) représenté par la formule générale (b1). Dans la formule, Rb1 représente un groupe hydrocarboné monovalent ayant un squelette stéroïde et de 17 à 50 atomes de carbone, à condition que le groupe hydrocarboné puisse contenir un hétéroatome. Yb1 représente un groupe de liaison bivalent contenant au moins un groupe fonctionnel choisi dans le groupe constitué par un groupe ester d'acide carboxylique, un groupe éther, un groupe ester d'acide carbonique, un groupe carbonyle et un groupe amide, ou une liaison simple. Vb1 représente un groupe alkylène, un groupe alkylène fluoré ou une liaison simple. Rf1 ou Rf2 représente un atome d'hydrogène, l'autre représentant un atome de fluor. m représente un nombre entier supérieur ou égal à 1, et Mm+ représente un cation organique de valence m.
(JA) 酸の作用により現像液に対する溶解性が変化する基材成分(A)と、一般式(b1)で表される化合物(B1)と、を含有するレジスト組成物を採用する。式中、Rb1は、ステロイド骨格を有する炭素数17~50の一価の炭化水素基を表す。但し、前記炭化水素基は、ヘテロ原子を含んでもよい。Yb1は、カルボン酸エステル基、エーテル基、炭酸エステル基、カルボニル基及びアミド基からなる群より選択される少なくとも1種の官能基を含む2価の連結基、又は単結合を表す。Vb1は、アルキレン基、フッ素化アルキレン基又は単結合を表す。Rf1及びRf2は、一方が水素原子であり、他方がフッ素原子である。mは1以上の整数であって、Mm+は、m価の有機カチオンを表す。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)