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1. (WO2019065499) RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND
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Pub. No.: WO/2019/065499 International Application No.: PCT/JP2018/035065
Publication Date: 04.04.2019 International Filing Date: 21.09.2018
IPC:
G03F 7/038 (2006.01) ,C08F 20/38 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20
Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
38
Esters containing sulfur
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
東京応化工業株式会社 TOKYO OHKA KOGYO CO., LTD. [JP/JP]; 神奈川県川崎市中原区中丸子150番地 150, Nakamaruko, Nakahara-ku, Kawasaki-shi, Kanagawa 2110012, JP
Inventors:
土屋 純一 TSUCHIYA Junichi; JP
遠藤 浩太朗 ENDO Kotaro; JP
藤崎 真史 FUJISAKI Masafumi; JP
仁藤 豪人 NITO Hideto; JP
Agent:
棚井 澄雄 TANAI Sumio; JP
松本 将尚 MATSUMOTO Masanao; JP
宮本 龍 MIYAMOTO Ryu; JP
飯田 雅人 IIDA Masato; JP
Priority Data:
2017-18501026.09.2017JP
Title (EN) RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND
(FR) COMPOSITION DE RÉSERVE, PROCÉDÉ DE FORMATION DE MOTIF DE RÉSERVE, COMPOSÉ POLYMÈRE ET COMPOSÉ
(JA) レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
Abstract:
(EN) A resist composition containing a resin component (A1) of which the solubility in a developing solution can vary by the action of an acid, wherein the resin component (A1) has a constituent unit (a0) represented by general formula (a0-1) (in the formula, Ya01 and Ya02 independently represent a single bond or an alkylene group having 1 to 3 carbon atoms, wherein the total number of the carbon atoms in Ya01 and the carbon atoms in Ya02 is 3 or less; Ra01 and Ra02 independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, wherein the total number of the carbon atoms in Ra01 and the carbon atoms in Ra02 is 2 to 6 inclusive; and A' represents an alkylene group having 1 to 5 carbon atoms).
(FR) La présente invention concerne une composition de réserve contenant un composant résine (A1) dont la solubilité dans une solution de développement peut varier en fonction de l'action d'un acide, le composant résine (A1) comprenant un motif constitutif (a0) représenté par la formule générale (a0-1) (dans la formule, Ya01 et Ya02 représentent indépendamment une liaison simple ou un groupe alkylène ayant de 1 à 3 atomes de carbone, le nombre total d'atomes de carbone dans Ya01 et d'atomes de carbone dans Ya02 étant inférieur ou égal à 3 ; Ra01 et Ra02 représentent indépendamment un atome d'hydrogène ou un groupe alkyle ayant de 1 à 4 atomes de carbone, le nombre total d'atomes de carbone dans Ra01 et d'atomes de carbone dans Ra02 étant dans la plage allant de 2 à 6 inclus ; et A' représente un groupe alkylène ayant de 1 à 5 atomes de carbone).
(JA) 酸の作用により現像液に対する溶解性が変化する樹脂成分(A1)を含有し、前記樹脂成分(A1)は、下記一般式(a0-1)で表される構成単位(a0)を有するレジスト組成物(式中、Ya01及びYa02はそれぞれ独立に単結合又は炭素数1~3のアルキレン基である。ただし、Ya01及びYa02の炭素数の合計は3以下である。Ra01及びRa02はそれぞれ独立に水素原子又は炭素数1~4のアルキル基である。ただし、Ra01及びRa02の炭素数の合計は2以上6以下である。A'は炭素数1~5のアルキレン基である)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)