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1. (WO2019065311) SEMICONDUCTOR ELEMENT, HIGH-FREQUENCY CIRCUIT, AND COMMUNICATION DEVICE
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Pub. No.: WO/2019/065311 International Application No.: PCT/JP2018/034212
Publication Date: 04.04.2019 International Filing Date: 14.09.2018
IPC:
H04B 1/38 (2015.01) ,H04B 1/00 (2006.01) ,H05K 3/46 (2006.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
B
TRANSMISSION
1
Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
38
Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
B
TRANSMISSION
1
Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
46
Manufacturing multi-layer circuits
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
浪花 優佑 NANIWA, Yusuke; JP
武藤 英樹 MUTO, Hideki; JP
山口 幸哉 YAMAGUCHI, Yukiya; JP
原田 駿 HARADA, Shun; JP
Agent:
吉川 修一 YOSHIKAWA, Shuichi; JP
傍島 正朗 SOBAJIMA, Masaaki; JP
Priority Data:
2017-19215829.09.2017JP
2018-08130220.04.2018JP
Title (EN) SEMICONDUCTOR ELEMENT, HIGH-FREQUENCY CIRCUIT, AND COMMUNICATION DEVICE
(FR) ÉLÉMENT SEMI-CONDUCTEUR, CIRCUIT HAUTE FRÉQUENCE ET DISPOSITIF DE COMMUNICATION
(JA) 半導体素子、高周波回路および通信装置
Abstract:
(EN) A switch IC (10) comprises: a base (10a); a rectangular first switch part (11) that is disposed on the base (10a) and has a plurality of switches (11a to 11c); and an amplification part (16) that is disposed on the base (10a) and has a plurality of amplification circuits (16a to 16d) to which a high-frequency signal that has passed through the first switch part (11) is input, wherein when viewing the base (10a) in plan view, the amplification part (16) is constituted by a first region A that extends along a first side from among the four sides of the first switch part (11), a second region B that extends along a second side orthogonal to the first side, and a third region C that extends along a third side parallel to the first side and orthogonal to the second side, and at least one of the plurality of amplification circuits (16a to 16d) is disposed on each of the first region A, the second region B, and the third region C.
(FR) Selon l'invention, un CI de commutation (10) comprend : une base (10a) ; une première partie de commutation rectangulaire (11) qui est disposée sur la base (10a) et comporte une pluralité de commutateurs (11a à 11c) ; et une partie d'amplification (16) qui est disposée sur la base (10a) et comporte une pluralité de circuits d'amplification (16a à 16d) auxquels est fourni un signal haute fréquence qui est passé à travers la première partie de commutation (11), où, en vue en plan de la base (10a), la partie d'amplification (16) est constituée d'une première région A qui s'étend le long d'un premier côté parmi les quatre côtés de la première partie de commutation (11), une deuxième région B qui s'étend le long d'un deuxième côté orthogonal au premier côté, et une troisième région C qui s'étend le long d'un troisième côté parallèle au premier côté et orthogonal au deuxième côté, et au moins un circuit de la pluralité de circuits d'amplification (16a à 16d) est disposé sur chacune des première région A, deuxième région B, et troisième région C.
(JA) スイッチIC(10)は、基体(10a)と、基体(10a)上に配置され、複数のスイッチ(11a~11c)を有する矩形状の第1スイッチ部(11)と、基体(10a)上に配置され、第1スイッチ部(11)を通過した高周波信号が入力される複数の増幅回路(16a~16d)を有する増幅部(16)と、を備え、基体(10a)を平面視したときに、増幅部(16)は、第1スイッチ部(11)の四辺のうちの第1辺に沿って延びる第1領域Aと、第1辺と直交する第2辺に沿って延びる第2領域Bと、第1辺と平行かつ第2辺と直交する第3辺に沿って延びる第3領域Cとで構成され、第1領域A、第2領域Bおよび第3領域Cの各領域上に、複数の増幅回路(16a~16d)のうちの少なくとも一つが配置されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)