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1. (WO2019065309) METHOD FOR SETTING CONDITIONS FOR HEATING SEMICONDUCTOR CHIP DURING BONDING, METHOD FOR MEASURING VISCOSITY OF NON-CONDUCTIVE FILM, AND BONDING DEVICE
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Pub. No.: WO/2019/065309 International Application No.: PCT/JP2018/034203
Publication Date: 04.04.2019 International Filing Date: 14.09.2018
Chapter 2 Demand Filed: 21.12.2018
IPC:
H01L 21/60 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Applicants:
株式会社新川 SHINKAWA LTD. [JP/JP]; 東京都武蔵村山市伊奈平2丁目51番地の1 51-1, Inadaira 2-chome, Musashimurayama-shi, Tokyo 2088585, JP
Inventors:
中村 智宣 NAKAMURA, Tomonori; JP
前田 徹 MAEDA, Toru; JP
永井 訓 NAGAI, Satoru; JP
佐伯 吉浩 SAEKI, Yoshihiro; JP
渡辺 治 WATANABE, Osamu; JP
Agent:
特許業務法人YKI国際特許事務所 YKI INTELLECTUAL PROPERTY ATTORNEYS; 東京都武蔵野市吉祥寺本町一丁目34番12号 1-34-12, Kichijoji-Honcho, Musashino-shi, Tokyo 1800004, JP
Priority Data:
2017-18792128.09.2017JP
Title (EN) METHOD FOR SETTING CONDITIONS FOR HEATING SEMICONDUCTOR CHIP DURING BONDING, METHOD FOR MEASURING VISCOSITY OF NON-CONDUCTIVE FILM, AND BONDING DEVICE
(FR) PROCÉDÉ DE RÉGLAGE DE CONDITIONS DE CHAUFFAGE DE PUCE SEMI-CONDUCTRICE PENDANT LA CONNEXION, PROCÉDÉ DE MESURE DE LA VISCOSITÉ D'UN FILM NON CONDUCTEUR ET DISPOSITIF DE CONNEXION
(JA) ボンディングの際の半導体チップの加熱条件設定方法及び非導電性フィルムの粘度測定方法ならびにボンディング装置
Abstract:
(EN) Provided is a method for setting the conditions for heating a semiconductor chip during bonding of the semiconductor chip using an NCF, wherein a heating start temperature and the rate of temperature increase are set on the basis of a viscosity characteristic map that indicates changes in viscosity with respect to the temperature of the NCF at various rates of temperature increase and a heating start temperature map that indicates changes in viscosity with respect to the temperature of the NCF when the heating start temperature is changed at the same rate of temperature increase.
(FR) L'invention concerne un procédé de réglage des conditions de chauffage d'une puce semi-conductrice pendant la connexion de la puce semi-conductrice à l'aide d'un NCF, une température de début de chauffage et la vitesse d'augmentation de température étant réglées sur la base d'une carte de caractéristiques de viscosité qui indique des changements de viscosité par rapport à la température du NCF à diverses vitesses d'augmentation de température et d'une carte de température de début de chauffage qui indique des changements de viscosité par rapport à la température du NCF lorsque la température de début de chauffage change à la même vitesse d'augmentation de température.
(JA) NCFを用いて半導体チップをボンディングする際の半導体チップの加熱条件設定方法であって、各種の温度上昇率におけるNCFの温度に対する粘度の変化を示す粘度特性マップと、同一の温度上昇率で加熱開始温度を変化させた場合のNCFの温度に対する粘度の変化を示す加熱開始温度特性マップとに基づいて加熱開始温度と温度上昇率とを設定する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)