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1. (WO2019065295) IMAGING ELEMENT, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE
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Pub. No.: WO/2019/065295 International Application No.: PCT/JP2018/034127
Publication Date: 04.04.2019 International Filing Date: 14.09.2018
IPC:
H01L 27/146 (2006.01) ,G02B 1/11 (2015.01) ,G02B 5/22 (2006.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
1
Optical elements characterised by the material of which they are made; Optical coatings for optical elements
10
Optical coatings produced by application to, or surface treatment of, optical elements
11
Anti-reflection coatings
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5
Optical elements other than lenses
20
Filters
22
Absorbing filters
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
名取 太知 NATORI Taichi; JP
Agent:
西川 孝 NISHIKAWA Takashi; JP
稲本 義雄 INAMOTO Yoshio; JP
Priority Data:
2017-19042229.09.2017JP
Title (EN) IMAGING ELEMENT, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE
(FR) ÉLÉMENT D'IMAGERIE, SON PROCÉDÉ DE PRODUCTION ET DISPOSITIF ÉLECTRONIQUE
(JA) 撮像素子およびその製造方法、並びに電子機器
Abstract:
(EN) The present technique relates to: an imaging element which is able to be suppressed in the occurrence of voids in an infrared blocking filter layer; a method for producing this imaging element; and an electronic device. This imaging element is provided with: a light reception sensor which photoelectrically converts light incident thereon; a cover glass which protects the upper surface of the light reception sensor, said upper surface functioning as a light incident surface of the light reception sensor; a frame which is arranged on the outer peripheral part between the light reception sensor and the cover glass, and which is formed from an inorganic material; and an infrared blocking filter layer which is formed inside the frame, while being on the same plane with the frame. The present technique is applicable, for example, to an imaging element having a CSP structure, and the like.
(FR) La présente invention concerne : un élément d'imagerie qui peut être supprimé en cas d'apparition de vides dans une couche de filtre bloquant les infrarouges ; un procédé de production dudit élément d'imagerie ; et un dispositif électronique. Cet élément d'imagerie comprend : un capteur récepteur de lumière qui convertit de manière photoélectrique la lumière incidente sur celui-ci ; un verre de couverture qui protège la surface supérieure du capteur récepteur de lumière, ladite surface supérieure fonctionnant comme une surface d'incidence de lumière du capteur récepteur de lumière ; un cadre qui est agencé sur la partie périphérique externe entre le capteur récepteur de lumière et le verre de couverture, et qui est formé d'un matériau inorganique ; et une couche de filtre bloquant les infrarouges qui est formée à l'intérieur du cadre, tout en étant sur le même plan que le cadre. La présente technique est applicable, par exemple, à un élément d'imagerie ayant une structure CSP et similaire.
(JA) 本技術は、赤外線カットフィルタ層におけるボイドの発生を抑えることができるようにする撮像素子およびその製造方法、並びに電子機器に関する。 撮像素子は、入射した光を光電変換する受光センサと、受光センサの光入射面である上面側を保護するカバーガラスと、受光センサとカバーガラスとの間の外周部に配置された、無機材料で形成された枠と、枠と同一平面の内側に形成された赤外線カットフィルタ層とを備える。本技術は、例えば、CSP構造の撮像素子等に適用できる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)