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1. (WO2019065291) IMAGE CAPTURING ELEMENT AND IMAGE CAPTURING DEVICE
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Pub. No.: WO/2019/065291 International Application No.: PCT/JP2018/034110
Publication Date: 04.04.2019 International Filing Date: 14.09.2018
IPC:
G01J 1/04 (2006.01) ,G01J 1/02 (2006.01) ,G01S 7/486 (2006.01) ,H01L 27/146 (2006.01) ,H04N 5/369 (2011.01) ,H04N 5/374 (2011.01)
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1
Photometry, e.g. photographic exposure meter
02
Details
04
Optical or mechanical part
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
1
Photometry, e.g. photographic exposure meter
02
Details
G PHYSICS
01
MEASURING; TESTING
S
RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
7
Details of systems according to groups G01S13/, G01S15/, G01S17/127
48
of systems according to group G01S17/58
483
Details of pulse systems
486
Receivers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
374
Addressed sensors, e.g. MOS or CMOS sensors
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
円能寺 皓平 ENNOJI Kohei; JP
山口 真悟 YAMAGUCHI Shingo; JP
Agent:
西川 孝 NISHIKAWA Takashi; JP
稲本 義雄 INAMOTO Yoshio; JP
Priority Data:
2017-18815228.09.2017JP
Title (EN) IMAGE CAPTURING ELEMENT AND IMAGE CAPTURING DEVICE
(FR) ÉLÉMENT DE CAPTURE D'IMAGES ET DISPOSITIF DE CAPTURE D'IMAGES
(JA) 撮像素子および撮像装置
Abstract:
(EN) The present technology relates to an image capturing element and an image capturing device, which can reduce a range-finding error. A solid-state image capturing device is provided with a pixel array unit having a plurality of pixels that photoelectrically convert incident light, wherein each of the pixels has: a substrate which photoelectrically converts incident light; a first signal extraction part which has an application electrode for generating an electric field by the application of voltage and an attraction electrode for detecting a signal carrier generated by the photoelectric conversion; a second signal extraction part which has an application electrode and an attraction electrode; and a light collecting part which is formed on the substrate and causes the light to be incident on the substrate. The light collecting part collects the light between at least the first signal extraction part and second signal extraction part provided in the substrate. The present technology can be applied to a CAPD sensor.
(FR) La présente invention concerne un élément de capture d'images et un dispositif de capture d'images, qui peuvent réduire une erreur de télémétrie. Un dispositif de capture d'image à semi-conducteur est pourvu d'une unité de réseau de pixels ayant une pluralité de pixels qui convertissent de manière photoélectrique la lumière incidente, chacun des pixels comprenant : un substrat qui convertit de manière photoélectrique la lumière incidente ; une première partie d'extraction de signal qui comporte une électrode d'application destinée à générer un champ électrique par l'application d'une tension et une électrode d'attraction destinée à détecter une porteuse de signal générée par la conversion photoélectrique ; une deuxième partie d'extraction de signal qui comporte une électrode d'application et une électrode d'attraction ; et une partie de collecte de lumière qui est formée sur le substrat et amène la lumière à être incidente sur le substrat. La partie de collecte de lumière collecte la lumière entre au moins la première partie d'extraction de signal et la deuxième partie d'extraction de signal disposée dans le substrat. La présente invention peut être appliquée à un capteur CAPD.
(JA) 本技術は、測距誤差を低減させることができるようにする撮像素子および撮像装置に関する。 固体撮像装置は、入射した光を光電変換する画素を複数有する画素アレイ部を備え、画素は、入射した光を光電変換する基板と、電圧の印加により電界を発生させるための印加電極と、光電変換により発生した信号キャリアを検出するための吸引電極とを有する第1の信号取り出し部と、印加電極と吸引電極とを有する第2の信号取り出し部と、基板上に形成され、光を基板に入射させる集光部とを有する。集光部は、少なくとも、基板内に設けられた第1の信号取り出し部と第2の信号取り出し部との間に光を集光させる。本技術は、CAPDセンサに適用することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)