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1. (WO2019065233) ELECTROSTATIC CHUCK DEVICE
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Pub. No.: WO/2019/065233 International Application No.: PCT/JP2018/033773
Publication Date: 04.04.2019 International Filing Date: 12.09.2018
IPC:
H01L 21/683 (2006.01) ,H01L 21/3065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
住友大阪セメント株式会社 SUMITOMO OSAKA CEMENT CO., LTD. [JP/JP]; 東京都千代田区六番町6番地28 6-28, Rokuban-cho, Chiyoda-ku, Tokyo 1028465, JP
Inventors:
小坂井 守 KOSAKAI Mamoru; JP
尾崎 雅樹 OZAKI Masaki; JP
前田 佳祐 MAEDA Keisuke; JP
Agent:
西澤 和純 NISHIZAWA Kazuyoshi; JP
佐藤 彰雄 SATO Akio; JP
萩原 綾夏 HAGIWARA Ayaka; JP
Priority Data:
2017-18972029.09.2017JP
Title (EN) ELECTROSTATIC CHUCK DEVICE
(FR) DISPOSITIF DE MANDRIN ÉLECTROSTATIQUE
(JA) 静電チャック装置
Abstract:
(EN) The purpose of the present invention is to reduce non-uniformity of etching in the plane of a wafer. This electrostatic chuck device is provided with: an electrostatic chuck unit which includes a sample mounting surface for mounting a sample and a first electrode for electrostatic suction; a cooling base unit which is mounted on the opposite side from the sample mounting surface with respect to the electrostatic chuck unit and which cools the electrostatic chuck unit; and an adhesive layer for adhering the electrostatic chuck unit and the cooling base unit to each other. The cooling base unit has the function of a second electrode which is an RF electrode. An RF electrode or a third electrode for LC adjustment is provided between the electrostatic chuck unit and the cooling base unit. The third electrode is adhered to the electrostatic chuck unit and the cooling base unit, and is insulated from the cooling base unit.
(FR) Le but de la présente invention est de réduire la non-uniformité de gravure dans le plan d'une tranche. Ce dispositif de mandrin électrostatique comprend : une unité de mandrin électrostatique qui comprend une surface de montage d'échantillon pour monter un échantillon et une première électrode pour une aspiration électrostatique ; une unité de base de refroidissement qui est montée sur le côté opposé à la surface de montage d'échantillon par rapport à l'unité de mandrin électrostatique et qui refroidit l'unité de mandrin électrostatique ; et une couche adhésive pour faire adhérer l'unité de mandrin électrostatique et l'unité de base de refroidissement l'une à l'autre. L'unité de base de refroidissement a la fonction d'une seconde électrode qui est une électrode RF. Une électrode RF ou une troisième électrode pour ajustement LC est disposée entre l'unité de mandrin électrostatique et l'unité de base de refroidissement. La troisième électrode est collée à l'unité de mandrin électrostatique et à l'unité de base de refroidissement, et est isolée de l'unité de base de refroidissement.
(JA) ウエハの面内のエッチングが不均一になってしまうことを軽減すること。静電チャック装置は、試料を載置する試料載置面を有するとともに静電吸着用の第1の電極を有する静電チャック部と、静電チャック部に対し試料載置面とは反対側に載置され静電チャック部を冷却する冷却ベース部と、静電チャック部と冷却ベース部とを接着する接着層と、を備え、冷却ベース部は、RF電極である第2の電極の機能を有しており、静電チャック部と冷却ベース部との間に、RF電極もしくはLC調整用の第3の電極を有しており、第3の電極は、静電チャック部及び冷却ベース部と接着され、冷却ベース部とは絶縁されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)