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1. (WO2019065174) TIME MEASUREMENT DEVICE AND TIME MEASUREMENT APPARATUS
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Pub. No.: WO/2019/065174 International Application No.: PCT/JP2018/033381
Publication Date: 04.04.2019 International Filing Date: 10.09.2018
IPC:
G01S 7/486 (2006.01) ,G01S 17/89 (2006.01) ,H01L 31/10 (2006.01) ,H01L 31/107 (2006.01)
G PHYSICS
01
MEASURING; TESTING
S
RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
7
Details of systems according to groups G01S13/, G01S15/, G01S17/127
48
of systems according to group G01S17/58
483
Details of pulse systems
486
Receivers
G PHYSICS
01
MEASURING; TESTING
S
RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17
Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
88
Lidar systems, specially adapted for specific applications
89
for mapping or imaging
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
107
the potential barrier working in avalanche mode, e.g. avalanche photodiode
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahicho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
長谷川 浩一 HASEGAWA, Koichi; JP
Agent:
特許業務法人つばさ国際特許事務所 TSUBASA PATENT PROFESSIONAL CORPORATION; 東京都新宿区新宿1丁目15番9号さわだビル3階 3F, Sawada Building, 15-9, Shinjuku 1-chome, Shinjuku-ku, Tokyo 1600022, JP
Priority Data:
2017-19030429.09.2017JP
Title (EN) TIME MEASUREMENT DEVICE AND TIME MEASUREMENT APPARATUS
(FR) DISPOSITIF DE MESURE TEMPORELLE ET APPAREIL DE MESURE TEMPORELLE
(JA) 時間計測デバイスおよび時間計測装置
Abstract:
(EN) The purpose of the present invention is to provide a time measurement device which can easily lay out a circuit. The time measurement device (20) of the present invention is provided with: a plurality of pixels (30) which are provided side by side in a first direction and each of which includes a single photon avalanche diode (SPAD) formed on a first semiconductor substrate, and generate a first logic signal (S35) according to a detection timing in the single photo avalanche diode (SPAD); and a time measurement unit (24) which is formed on a second semiconductor substrate affixed to the first semiconductor substrate and measures a detection timing in each of the plurality of pixels (30). Among the plurality of pixels (30), each of pixels other than a first pixel which is disposed on one end in the first direction generates an output signal on the basis of an output signal of one pixel other than said each pixel and the first logic signal (S35) generated in said each pixel. The time measurement unit (24) measures the detection timing in each of the plurality of pixels (30) on the basis of an output signal of a second pixel disposed on the other end in the first direction among the plurality of pixels (30). The time measurement device (20) of the present invention can be applied to, for example, a distance measurement device.
(FR) Le but de la présente invention est de fournir un dispositif de mesure temporelle permettant de configurer facilement un circuit. Le dispositif de mesure temporelle (20) de la présente invention comprend : une pluralité de pixels (30) situés côte à côte dans une première direction, chaque pixel comprenant une photodiode à avalanche à photon unique (SPAD) formée sur un premier substrat semi-conducteur, et générant un premier signal logique (S35) en fonction d'une synchronisation de détection dans la photodiode à avalanche à photon unique (SPAD); et une unité de mesure temporelle (24) formée sur un second substrat semi-conducteur fixé au premier substrat semi-conducteur et mesurant une synchronisation de détection dans chaque pixel de la pluralité de pixels (30). Parmi la pluralité de pixels (30), chacun des pixels autres qu'un premier pixel qui est disposé sur une extrémité dans la première direction génère un signal de sortie en fonction d'un signal de sortie d'un pixel autre que chacun desdits pixels et que le premier signal logique (S35) généré dans chacun desdits pixels. L'unité de mesure temporelle (24) mesure la synchronisation de détection dans chaque pixel de la pluralité de pixels (30) en fonction d'un signal de sortie d'un second pixel disposé sur l'autre extrémité dans la première direction parmi la pluralité de pixels (30). Le dispositif de mesure temporelle de la présente invention peut s'appliquer, par exemple, à un dispositif de télémétrie.
(JA) 本発明は、回路のレイアウトをしやすい時間計測デバイスを提供することを目的とする。 本発明の時間計測デバイス(20)は、第1の方向に並設され、それぞれが、第1の半導体基板に形成されたシングルフォトンアバランシェダイオード(SPAD)を含み、シングルフォトンアバランシェダイオード(SPAD)における検出タイミングに応じた第1の論理信号(S35)を生成する複数の画素(30)と、第1の半導体基板に貼り合わせられた第2の半導体基板に形成され、複数の画素(30)のそれぞれにおける検出タイミングを計測する時間計測部(24)とを備える。上記複数の画素(30)のうちの第1の方向の一端に配置された第1の画素以外の各画素は、その画素以外の一の画素の出力信号と、その画素において生成された第1の論理信号(S35)とに基づいて、出力信号を生成し、時間計測部(24)は、複数の画素(30)のうちの第1の方向の他端に配置された第2の画素の出力信号に基づいて、複数の画素(30)のそれぞれにおける検出タイミングを計測する。 本発明の時間計測デバイス(20)は、例えば、距離計測デバイスに応用できる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)