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1. (WO2019065095) MANUFACTURING METHOD FOR METAL-FILLED MICROSTRUCTURE AND INSULATING BASE MATERIAL
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Pub. No.: WO/2019/065095 International Application No.: PCT/JP2018/032556
Publication Date: 04.04.2019 International Filing Date: 03.09.2018
IPC:
C25D 21/12 (2006.01) ,C25D 11/20 (2006.01)
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
21
Processes for servicing or operating cells for electrolytic coating
12
Process control or regulation
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
11
Electrolytic coating by surface reaction, i.e. forming conversion layers
02
Anodisation
04
of aluminium or alloys based thereon
18
After-treatment, e.g. pore-sealing
20
Electrolytic after-treatment
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
小松 寛 KOMATSU Hiroshi; JP
殿原 浩二 TONOHARA Koji; JP
糟谷 雄一 KASUYA Yuichi; JP
堀田 吉則 HOTTA Yoshinori; JP
Agent:
中島 順子 NAKASHIMA Junko; JP
米倉 潤造 YONEKURA Junzo; JP
村上 泰規 MURAKAMI Yasunori; JP
Priority Data:
2017-18455826.09.2017JP
Title (EN) MANUFACTURING METHOD FOR METAL-FILLED MICROSTRUCTURE AND INSULATING BASE MATERIAL
(FR) PROCÉDÉ DE FABRICATION DE MICROSTRUCTURE REMPLIE DE MÉTAL ET DE MATÉRIAU DE BASE ISOLANT
(JA) 金属充填微細構造体の製造方法および絶縁性基材
Abstract:
(EN) Provided is a manufacturing method for a metal-filled microstructure for through-holes and an insulating base material that control against a through-hole being insufficiently metal-filled and hollow spaces forming when multiple through-holes are being filled with metal. The manufacturing method for the metal-filled microstructure, wherein multiple through-holes penetrating in the thickness direction of the insulating base material are filled with metal, has a metal-filling process for filling the multiple through-holes with the metal. During the metal-filling process, the insulating base material with the multiple through-holes is immersed for more than five seconds in a plating solution containing metal ions without any voltage applied thereto, and by subsequently increasing the current value continuously or over multiple stages, the multiple through-holes are filled with the metal through electrolytic plating.
(FR) Cette invention concerne un procédé de fabrication d'une microstructure remplie de métal pour trous traversants et d'un matériau de base isolant qui empêchent un trou traversant d'être insuffisamment rempli de métal et la formation d'espaces creux lors du remplissage de multiples trous traversants par un métal. Le procédé de fabrication de la microstructure remplie de métal, dans lequel de multiples trous traversants pénétrant dans la direction de l'épaisseur du matériau de base isolant sont remplis de métal, comprend un processus de remplissage de métal pour remplir les multiples trous traversants du métal. Pendant le processus de remplissage de métal, le matériau de base isolant avec les multiples trous traversants est immergé pendant plus de cinq secondes dans une solution de métallisation contenant des ions métalliques sans application de tension, et en augmentant par la suite la valeur du courant en continu ou par incréments multiples, les multiples trous traversants sont remplis du métal par dépôt électrolytique.
(JA) 複数の貫通孔への金属充填に際し、貫通孔に金属が十分に充填されないこと、および空洞が発生することを抑制した貫通孔の金属充填微細構造体の製造方法および絶縁性基材を提供する。絶縁性基材の厚み方向に貫通した複数の貫通孔に金属を充填された金属充填微細構造体の製造方法は、複数の貫通孔に金属を充填する金属充填工程を有する。金属充填工程は、複数の貫通孔を有する絶縁性基材を、金属イオンを含むめっき液中に、電圧を印加しない状態で5秒を超える時間浸漬し、その後、連続的または多段的に電流値を高くすることで電解めっきにより複数の貫通孔に金属を充填する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)