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1. (WO2019065055) ORGANIC THIN FILM TRANSISTOR
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Pub. No.: WO/2019/065055 International Application No.: PCT/JP2018/031902
Publication Date: 04.04.2019 International Filing Date: 29.08.2018
IPC:
H01L 29/786 (2006.01) ,H01L 21/312 (2006.01) ,H01L 51/05 (2006.01) ,H01L 51/30 (2006.01) ,H01L 51/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312
Organic layers, e.g. photoresist
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
住友化学株式会社 SUMITOMO CHEMICAL COMPANY, LIMITED [JP/JP]; 東京都中央区新川二丁目27番1号 27-1, Shinkawa 2-chome, Chuo-ku, Tokyo 1048260, JP
Inventors:
金坂 将 KANESAKA, Sho; JP
吉川 栄二 YOSHIKAWA, Eiji; JP
横井 優季 YOKOI, Yuki; JP
Agent:
中山 亨 NAKAYAMA, Tohru; JP
坂元 徹 SAKAMOTO, Toru; JP
Priority Data:
2017-18446326.09.2017JP
Title (EN) ORGANIC THIN FILM TRANSISTOR
(FR) TRANSISTOR À COUCHES MINCES ORGANIQUE
(JA) 有機薄膜トランジスタ
Abstract:
(EN) Provided is an organic thin film transistor that has excellent inter-layer contact tightness and with which a large source drain current can be obtained. This organic thin film transistor comprises a gate electrode, a gate insulation layer (A), a gate insulation layer (B), an organic semiconductor layer, a source electrode, and a drain electrode. The gate insulation layer (A) and the gate insulation layer (B) are provided between the gate electrode and the organic semiconductor layer. One surface of the gate insulation layer (B) is adjacent to the organic semiconductor layer. The gate insulation layer (B) is a layer containing a cross-linked polymer compound having one or more species of atom selected from the group consisting of silicon atoms and fluorine atoms. The dielectric constant of the gate insulation layer (A) is higher than the dielectric constant of the gate insulation layer (B) by 0.5 or more.
(FR) L'invention concerne un transistor à couches minces organique qui est excellent en termes d'adhérence intercouche, et qui permet d'obtenir un courant source-drain important. Ainsi, l'invention concerne un transistor à couches minces organique qui est équipé d'une électrode de grille, d'une couche d'isolation de grille (A), d'une couche d'isolation de grille (B), d'une couche semi-conductrice organique, d'une électrode source et d'une électrode drain. Plus précisément, ce transistor à couches minces organique est équipé de la couche d'isolation de grille (A) et de la couche d'isolation de grille (B) entre l'électrode de grille et la couche semi-conductrice organique. Une des faces de la couche d'isolation de grille (B) est en contact avec la couche semi-conductrice organique. Ladite couche d'isolation de grille (B) contient un composé polymère réticulé possédant au moins une sorte d'atomes choisie dans un groupe constitué d'un atome de silicium et d'un atome de fluor. La permittivité diélectrique relative de ladite couche d'isolation de grille (A), est supérieure de 0,5 ou plus à la permittivité diélectrique relative de ladite couche d'isolation de grille (B).
(JA) 層間の密着性に優れ、大きなソースドレイン電流が得られる有機薄膜トランジスタを提供する。ゲート電極と、ゲート絶縁層(A)と、ゲート絶縁層(B)と、有機半導体層と、ソース電極と、ドレイン電極とを備える有機薄膜トランジスタであって、ゲート電極と有機半導体層との間にゲート絶縁層(A)とゲート絶縁層(B)とを備え、ゲート絶縁層(B)の一方の面は有機半導体層に隣接し、前記ゲート絶縁層(B)が、ケイ素原子およびフッ素原子からなる群より選ばれる一種以上の原子を有する架橋高分子化合物を含む層であり、前記ゲート絶縁層(A)の比誘電率が、ゲート絶縁層(B)の比誘電率より0.5以上高い有機薄膜トランジスタ。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)