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1. (WO2019065049) POWER SUPPLY IC
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/065049 International Application No.: PCT/JP2018/031757
Publication Date: 04.04.2019 International Filing Date: 28.08.2018
IPC:
H02M 3/155 (2006.01) ,H01L 21/336 (2006.01) ,H01L 21/8234 (2006.01) ,H01L 23/50 (2006.01) ,H01L 27/06 (2006.01) ,H01L 29/78 (2006.01)
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
3
Conversion of dc power input into dc power output
02
without intermediate conversion into ac
04
by static converters
10
using discharge tubes with control electrode or semiconductor devices with control electrode
145
using devices of a triode or transistor type requiring continuous application of a control signal
155
using semiconductor devices only
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
50
for integrated circuit devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants:
ローム株式会社 ROHM CO., LTD. [JP/JP]; 京都府京都市右京区西院溝崎町21番地 21, Saiin Mizosaki-Cho, Ukyo-Ku, Kyoto-Shi, Kyoto 6158585, JP
Inventors:
名手 智 NATE Satoru; JP
佐藤 好則 SATO Yoshinori; JP
Agent:
特許業務法人 佐野特許事務所 SANO PATENT OFFICE; 大阪府大阪市中央区天満橋京町2-6天満橋八千代ビル別館5F 5F, Tenmabashi-Yachiyo Bldg. Bekkan, 2-6, Tenmabashi-Kyomachi, Chuo-Ku, Osaka-Shi, Osaka 5400032, JP
Priority Data:
2017-18817128.09.2017JP
2017-18818128.09.2017JP
Title (EN) POWER SUPPLY IC
(FR) CI D’ALIMENTATION ÉLECTRIQUE
(JA) 電源IC
Abstract:
(EN) This power supply IC 100 is a semiconductor integrated circuit device serving as a main part for controlling a switching power supply and is formed by integrating a feedback resistor 201 and an output feedback control unit 202 on a single semiconductor substrate 200, said feedback resistor 201 generating a feedback voltage by dividing the output voltage of the switching power supply (or the induced voltage appearing across an auxiliary winding provided on the primary side of a transformer included in an insulation-type switching power supply), said output feedback control unit 202 performing output feedback control of the switching power supply in accordance with the feedback voltage. The feedback resistor 201 is a polysilicon resistor having a withstand voltage of 100 V or more. A high-voltage region 203 having higher withstand voltage in the substrate thickness direction than the other region is formed in the semiconductor substrate 200, and the feedback resistor 201 is formed on the high-voltage region 203. The high-voltage region 203 is, for example, an LDMOSFET region.
(FR) La présente invention concerne un CI d’alimentation électrique (100) qui est un dispositif à circuit intégré semi-conducteur servant de partie principale de commande d’une alimentation électrique à commutation et qui est formé en intégrant une résistance rétroactive (201) et une unité de commande rétroactive de sortie (202) sur un seul substrat semi-conducteur (200), ladite résistance rétroactive (201) générant une tension rétroactive en divisant la tension de sortie de l’alimentation électrique à commutation (ou la tension induite apparaissant à travers un enroulement auxiliaire disposé du côté primaire d’un transformateur inclus dans une alimentation électrique à commutation de type à isolation), ladite unité de commande rétroactive de sortie (202) procédant à une commande rétroactive de sortie de l’alimentation électrique à commutation en fonction de la tension rétroactive. La résistance rétroactive (201) est une résistance en polysilicium dont la tension de résistance est supérieure ou égale à 100 V. Une zone à haute tension (203) dont la tension de résistance est supérieure dans la direction de l’épaisseur du substrat à celle de l’autre zone est formée dans le substrat semi-conducteur (200), et la résistance rétroactive (201) est formée sur la zone à haute tension (203). La zone à haute tension (203) est, par exemple, une zone de LDMOSFET.
(JA) 電源IC100は、スイッチング電源の制御主体となる半導体集積回路装置であり、スイッチング電源の出力電圧(または絶縁型スイッチング電源に含まれるトランスの一次側に設けられた補助巻線に現れる誘起電圧)を分圧して帰還電圧を生成する帰還抵抗201と、帰還電圧に応じてスイッチング電源の出力帰還制御を行う出力帰還制御部202と、を単一の半導体基板200に集積化して成る。帰還抵抗201は、100V以上の耐圧を持つポリシリコン抵抗である。半導体基板200には、その他の領域よりも基板厚さ方向の耐圧が高い高耐圧領域203が形成されており、帰還抵抗201は、高耐圧領域203上に形成されている。高耐圧領域203は、例えば、LDMOSFET領域である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)