Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019065017) POSITIVE RESIST COMPOSITION, RESIST FILM FORMATION METHOD, AND METHOD FOR PRODUCING LAMINATE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/065017 International Application No.: PCT/JP2018/031212
Publication Date: 04.04.2019 International Filing Date: 23.08.2018
IPC:
G03F 7/039 (2006.01) ,C08F 212/04 (2006.01) ,C08F 220/22 (2006.01) ,G03F 7/004 (2006.01) ,G03F 7/20 (2006.01) ,G03F 7/38 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
212
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02
Monomers containing only one unsaturated aliphatic radical
04
containing one ring
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
22
Esters containing halogen
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
38
Treatment before imagewise removal, e.g. prebaking
Applicants:
日本ゼオン株式会社 ZEON CORPORATION [JP/JP]; 東京都千代田区丸の内一丁目6番2号 6-2, Marunouchi 1-chome, Chiyoda-ku Tokyo 1008246, JP
Inventors:
星野 学 HOSHINO Manabu; JP
Agent:
杉村 憲司 SUGIMURA Kenji; JP
Priority Data:
2017-19162029.09.2017JP
Title (EN) POSITIVE RESIST COMPOSITION, RESIST FILM FORMATION METHOD, AND METHOD FOR PRODUCING LAMINATE
(FR) COMPOSITION DE RÉSERVE POSITIVE, PROCÉDÉ DE FORMATION DE FILM DE RÉSERVE ET PROCÉDÉ DE PRODUCTION DE STRATIFIÉ
(JA) ポジ型レジスト組成物、レジスト膜形成方法、および積層体の製造方法
Abstract:
(EN) Provided are a positive resist composition, etc., said positive resist composition being capable of improving the adhesiveness of a resist film, which is formed via a prebake step performed at a broader range of heating temperatures over a broader range of heating times (heating temperatures in a range at the lower temperature side), to a workpiece and reducing the molecular weight change in a polymer in the resist film before and after the prebake step. The positive resist composition according to the present invention comprises a polymer and a solvent, wherein the polymer comprises monomer unit (A) represented by general formula (I) and monomer unit (B) represented by general formula (II), and the solvent is at least one member selected from the group consisting of isoamyl acetate, n-butyl formate, isobutyl formate, n-amyl formate and isoamyl formate.
(FR) L'invention concerne une composition de réserve positive, etc., ladite composition de réserve positive permettant d'améliorer l'adhésivité d'un film de réserve qui est formé par l'intermédiaire d'une étape de pré-cuisson appliquée sur une pièce à une plage plus étendue de températures de chauffage sur une plage plus étendue de temps de chauffage (températures de chauffage dans une plage au niveau du côté de température inférieure), et permettant de réduire le changement de masse moléculaire dans un polymère dans le film de réserve avant et après l'étape de pré-cuisson. La composition de réserve positive selon la présente invention comprend un polymère et un solvant, le polymère comprenant un motif monomère (A) représenté par la formule générale (I) et un motif monomère (B) représenté par la formule générale (II), et le solvant étant au moins un élément choisi dans le groupe constitué par l'acétate d'isoamyle, le formiate de n-butyle, le formiate d'isobutyle, le formiate de n-amyle et le formiate d'isoamyle.
(JA) より幅広い範囲のプリベーク工程における加熱温度および加熱時間(より低温側の範囲の加熱温度)で、プリベーク工程を経て形成されたレジスト膜と被加工物との密着性を向上させることができると共に、プリベーク工程前後のレジスト膜における重合体の分子量の変化を低減することができるポジ型レジスト組成物等を提供する。本発明のポジ型レジスト組成物は、重合体と溶剤とを含むポジ型レジスト組成物であって、前記重合体は、下記一般式(I)で表される単量体単位(A)と、下記一般式(II)で表される単量体単位(B)とを有し、前記溶剤は、酢酸イソアミル、ギ酸n-ブチル、ギ酸イソブチル、ギ酸n-アミル、およびギ酸イソアミルからなる群より選択される少なくとも1種である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)