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1. (WO2019064994) EXCHANGE COUPLED FILM, AND MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETISM DETECTION DEVICE USING SAME
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Pub. No.: WO/2019/064994 International Application No.: PCT/JP2018/030751
Publication Date: 04.04.2019 International Filing Date: 21.08.2018
IPC:
H01L 43/10 (2006.01) ,G01R 33/09 (2006.01) ,H01F 10/30 (2006.01) ,H01F 10/32 (2006.01) ,H01L 43/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
02
Measuring direction or magnitude of magnetic fields or magnetic flux
06
using galvano-magnetic devices
09
Magneto-resistive devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10
Thin magnetic films, e.g. of one-domain structure
26
characterised by the substrate or intermediate layers
30
characterised by the composition of intermediate layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10
Thin magnetic films, e.g. of one-domain structure
32
Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
Applicants:
アルプスアルパイン株式会社 ALPS ALPINE CO., LTD. [JP/JP]; 東京都大田区雪谷大塚町1番7号 1-7, Yukigaya-otsukamachi, Ota-ku, Tokyo 1458501, JP
Inventors:
齋藤 正路 SAITO, Masamichi; JP
遠藤 広明 ENDO, Hiroaki; JP
小池 文人 KOIKE, Fumihito; JP
Agent:
大窪 克之 OKUBO, Katsuyuki; JP
Priority Data:
2017-18654427.09.2017JP
2018-02126308.02.2018JP
Title (EN) EXCHANGE COUPLED FILM, AND MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETISM DETECTION DEVICE USING SAME
(FR) FILM À COUPLAGE D'ÉCHANGE, ET ÉLÉMENT À EFFET MAGNÉTORÉSISTIF AINSI QUE DISPOSITIF DE DÉTECTION D'AIMANTATION L'UTILISANT
(JA) 交換結合膜ならびにこれを用いた磁気抵抗効果素子および磁気検出装置
Abstract:
(EN) According to the present invention, an exchange coupled film 10 that has a fixed magnetic layer for which a magnetic field (Hex) in which the magnetization direction thereof inverts is large, that is highly stable at high temperatures, and that has excellent high-field magnetoresistance comprises an antiferromagnetic layer 2 and a fixed magnetic layer 3 that contacts the antiferromagnetic layer 2. The antiferromagnetic layer 2 has an alternating laminate structure that has at least three layers and is formed by alternatingly laminating an X1Cr layer 2A (X1 being at least one element selected from the group that consists of the platinum group metals and Ni) and an X2Mn layer 2B (X2 being at least one element selected from the group that consists of the platinum group metals and Ni and being the same as or different from X1).
(FR) La présente invention concerne un film à couplage d'échange 10, qui comporte une couche magnétique fixe dont le sens d'aimantation ne peut être inversé que par un fort champ magnétique (Hex), qui est hautement stable à des températures élevées et qui présente une excellente magnétorésistance sous champ intense, comprenant une couche antiferromagnétique 2 et une couche magnétique fixe 3 qui est en contact avec la couche antiferromagnétique 2. La couche antiferromagnétique 2 présente une structure stratifiée alternée qui comporte au moins trois couches et est formée par stratification alternée d'une couche de X1Cr 2A (X1 étant au moins un élément choisi dans le groupe qui est constitué des métaux du groupe du platine et de Ni) et d'une couche de X2Mn 2B (X2 étant au moins un élément choisi choisi dans le groupe qui est constitué des métaux du groupe du platine et de Ni et étant le même que X1 ou différent).
(JA) 固定磁性層の磁化の向きが反転する磁界(Hex)が大きく高温条件下における安定性が高く、しかも強磁場耐性に優れる交換結合膜10は、反強磁性層2と強磁性層2に接する固定磁性層3とを備えており、反強磁性層2は、XCr層(ただし、Xは白金族元素およびNiからなる群から選ばれる一種または二種以上の元素)2AとXMn層(ただし、Xは白金族元素およびNiからなる群から選ばれる一種または二種以上の元素であって、Xと同じでも異なっていてもよい)2Bとが交互に積層された三層以上の交互積層構造を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)