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1. (WO2019064970) PATTERN FORMING METHOD, ION IMPLANTATION METHOD, METHOD FOR PRODUCING SOLID-STATE IMAGING ELEMENT, MULTILAYER RESIST FILM, AND ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION
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Pub. No.: WO/2019/064970 International Application No.: PCT/JP2018/030171
Publication Date: 04.04.2019 International Filing Date: 13.08.2018
IPC:
G03F 7/095 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
095
having more than one photosensitive layer
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
西田 陽一 NISHIDA Yoichi; JP
東 耕平 HIGASHI Kohei; JP
畠山 直也 HATAKEYAMA Naoya; JP
Agent:
中島 順子 NAKASHIMA Junko; JP
米倉 潤造 YONEKURA Junzo; JP
村上 泰規 MURAKAMI Yasunori; JP
Priority Data:
2017-19025829.09.2017JP
Title (EN) PATTERN FORMING METHOD, ION IMPLANTATION METHOD, METHOD FOR PRODUCING SOLID-STATE IMAGING ELEMENT, MULTILAYER RESIST FILM, AND ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION
(FR) PROCÉDÉ DE FORMATION DE MOTIF, PROCÉDÉ D'IMPLANTATION IONIQUE, PROCÉDÉ DE PRODUCTION D'ÉLÉMENT D'IMAGERIE À SEMI-CONDUCTEUR, FILM DE RÉSERVE MULTICOUCHE, ET COMPOSITION DE RÉSINE PHOTOSENSIBLE OU RADIOSENSIBLE ACTIVE
(JA) パターン形成方法、イオン注入方法、固体撮像素子の製造方法、多層レジスト膜、感活性光線性又は感放射線性樹脂組成物
Abstract:
(EN) Provided is a pattern forming method which is capable of forming a pattern that has excellent resolution, while exhibiting excellent shielding performance during ion implantation. Also provided are an ion implantation method and a method for producing a solid-state imaging element, each of which uses the above-described pattern forming method. Also provided are a multilayer resist film and an active light sensitive or radiation sensitive resin composition, each of which is used in the above-described pattern forming method. This pattern forming method comprises: a step for forming, on a substrate, a multilayer resist film which comprises a first resist film having a film thickness of 5 μm or more and a second resist film that is arranged on the first resist film and has a higher film density than the first resist film; a light exposure step for exposing the multilayer resist film to light; and a development step for developing the light-exposed multilayer resist film.
(FR) L'invention concerne un procédé de formation de motif qui est capable de former un motif qui présente une excellente résolution, tout en présentant une excellente performance de blindage pendant l'implantation ionique. L'invention concerne également un procédé d'implantation ionique et un procédé de production d'un élément d'imagerie à semi-conducteur, dont chacun utilise le procédé de formation de motif décrit ci-dessus. L'invention concerne également un film de réserve multicouche et une composition de résine photosensible ou radiosensible active, dont chacun est utilisée dans le procédé de formation de motif décrit ci-dessus. Ce procédé de formation de motif comprend : une étape de formation, sur un substrat, d'un film de réserve multicouche qui comprend un premier film de réserve ayant une épaisseur de film de 5 µm ou plus et un second film de réserve qui est disposé sur le premier film de réserve et qui présente une densité de film supérieure à celle du premier film de réserve ; une étape d'exposition à la lumière pour exposer le film de réserve multicouche à la lumière ; et une étape de développement pour développer le film de réserve multicouche exposé à la lumière.
(JA) 解像性に優れ、且つ、イオン注入時の遮蔽性能に優れたパターンを形成できるパターン形成方法を提供する。また、上記パターン形成方法を用いたイオン注入方法、及び固体撮像素子の製造方法を提供する。また、上記パターン形成方法に用いられる多層レジスト膜、及び感活性光線性又は感放射線性樹脂組成物を提供する。パターン形成方法は、基板上に、膜厚5μm以上の第1のレジスト膜と、上記第1のレジスト膜上に配置され、上記第1のレジスト膜よりも膜密度の高い第2のレジスト膜と、を含む多層レジスト膜を形成する工程と、上記多層レジスト膜を露光する露光工程と、露光された上記多層レジスト膜を現像する現像工程と、を含む。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)