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1. (WO2019064831) POWER SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING SAME
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Pub. No.: WO/2019/064831 International Application No.: PCT/JP2018/026642
Publication Date: 04.04.2019 International Filing Date: 17.07.2018
IPC:
H01L 23/58 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01) ,H02M 1/00 (2007.01) ,H02M 7/48 (2007.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
58
Structural electrical arrangements for semiconductor devices not otherwise provided for
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1
Details of apparatus for conversion
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants:
日立オートモティブシステムズ株式会社 HITACHI AUTOMOTIVE SYSTEMS, LTD. [JP/JP]; 茨城県ひたちなか市高場2520番地 2520, Takaba, Hitachinaka-shi, Ibaraki 3128503, JP
Inventors:
楠川 順平 KUSUKAWA Junpei; JP
千田 忠彦 CHIDA Tadahiko; JP
Agent:
戸田 裕二 TODA Yuji; JP
Priority Data:
2017-18940529.09.2017JP
Title (EN) POWER SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE USING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR DE PUISSANCE ET DISPOSITIF DE CONVERSION DE PUISSANCE L'UTILISANT
(JA) パワー半導体装置およびそれを用いた電力変換装置
Abstract:
(EN) The objective of the invention is to prevent a drop in reliability due to detachment of an insulation layer from another member in a power semiconductor device. This power semiconductor device comprises a power semiconductor element, a conductor part transmitting a current to the power semiconductor element, an insulation layer in contact with the surface of the conductor part on the opposite side from the side on which the power semiconductor element is disposed, and a metallic heat dissipation part facing the conductor part, with the insulation layer therebetween. The insulation layer has an insulation section and a conductor layer that is sandwiched by the conductor part and the metallic heat dissipation part through the insulation part, and also has an output terminal connected to the conductor layer and outputting different signals according to the contact state of the insulation part.
(FR) L'objectif de l'invention est d'empêcher une chute de fiabilité due au détachement d'une couche d'isolation d'un autre élément dans un dispositif semi-conducteur de puissance. Ce dispositif semi-conducteur de puissance comprend un élément semi-conducteur de puissance, une partie conductrice transmettant un courant à l'élément semi-conducteur de puissance, une couche d'isolation en contact avec la surface de la partie conductrice sur le côté opposé à partir du côté sur lequel l'élément semi-conducteur de puissance est disposé, et une partie de dissipation de chaleur métallique faisant face à la partie conductrice, la couche d'isolation étant entre celles-ci. La couche d'isolation a une section d'isolation et une couche conductrice qui est prise en sandwich par la partie conductrice et la partie de dissipation de chaleur métallique à travers la partie d'isolation, et a également une borne de sortie connectée à la couche conductrice et émettant différents signaux en fonction de l'état de contact de la partie d'isolation.
(JA) パワー半導体装置の絶縁層と他の部材が剥離することによる信頼性低下を抑制することである。 本発明に係るパワー半導体装置は、パワー半導体素子と、当該パワー半導体素子に電流を伝達する導体部と、前記パワー半導体素子が配置された側とは反対側の前記導体部の面に接触する絶縁層と、前記絶縁層を挟んで前記導体部と対向する金属製放熱部と、を備え、前記絶縁層は、絶縁部と、当該絶縁部を介して前記導体部と前記金属製放熱部に挟まれる導体層とを有し、前記導体層に接続されかつ当該絶縁部の接触状態に応じて異なる信号を出力する出力端子を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)