Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019064783) BASE SUBSTRATE, FUNCTIONAL ELEMENT, AND PRODUCTION METHOD FOR BASE SUBSTRATE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/064783 International Application No.: PCT/JP2018/025154
Publication Date: 04.04.2019 International Filing Date: 03.07.2018
IPC:
C30B 29/38 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
38
Nitrides
Applicants:
日本碍子株式会社 NGK INSULATORS, LTD. [JP/JP]; 愛知県名古屋市瑞穂区須田町2番56号 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi 4678530, JP
Inventors:
坂井 正宏 SAKAI Masahiro; JP
大上 翔平 OUE Shohei; JP
後藤 万佐司 GOTO Masashi; JP
吉野 隆史 YOSHINO Takashi; JP
Agent:
細田 益稔 HOSODA Masutoshi; JP
青木 純雄 AOKI Sumio; JP
Priority Data:
2017-18634027.09.2017JP
Title (EN) BASE SUBSTRATE, FUNCTIONAL ELEMENT, AND PRODUCTION METHOD FOR BASE SUBSTRATE
(FR) SUBSTRAT DE BASE, ÉLÉMENT FONCTIONNEL ET PROCÉDÉ DE PRODUCTION POUR SUBSTRAT DE BASE
(JA) 下地基板、機能素子および下地基板の製造方法
Abstract:
(EN) A base substrate 6 that comprises: a support substrate 1; and a base crystal layer 3 that is provided upon a main surface 1a of the support substrate 1, comprises crystals of a nitride of a group 13 element, and has a crystal growth surface 3a. The base crystal layer 3 comprises a bulge 5. Between the bulge 5 and the support substrate 1 is/are the product of a reaction between the material of the support substrate 1 and the crystals of a nitride of a group 13 element, a group 13 element, and/or voids.
(FR) L'invention concerne un substrat de base (6) qui comprend : un substrat de support (1) ; et une couche cristalline de base (3) qui est disposée sur une surface principale (1a) du substrat de support (1), comprend des cristaux d'un nitrure d'un élément du groupe 13, et possède une surface (3a) de croissance cristalline. La couche cristalline de base (3) comprend un renflement (5). Entre le renflement (5) et le substrat de support (1) se trouve(nt) le produit d'une réaction entre le matériau du substrat de support (1) et les cristaux d'un nitrure d'un élément du groupe 13, un élément du groupe 13 et/ou des vides.
(JA) 下地基板6は、支持基板1、および支持基板1の主面1a上に設けられ、13族元素窒化物結晶からなり、結晶育成面3aを有する下地結晶層3を備える。下地結晶層3が隆起部5を備えている。隆起部5と支持基板1との間に、支持基板1の材質と13族元素窒化物結晶との反応物、13族金属および/またはボイドが存在する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)