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1. (WO2019064697) CRUCIBLE-SUPPORTING PEDESTAL, QUARTZ CRUCIBLE-SUPPORTING DEVICE, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
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Pub. No.: WO/2019/064697 International Application No.: PCT/JP2018/021026
Publication Date: 04.04.2019 International Filing Date: 31.05.2018
IPC:
C30B 29/06 (2006.01) ,C30B 15/00 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
Applicants:
株式会社SUMCO SUMCO CORPORATION [JP/JP]; 東京都港区芝浦一丁目2番1号 1-2-1, Shibaura, Minato-ku, Tokyo 1058634, JP
Inventors:
宗実 賢二 MUNEZANE Kenji; JP
Agent:
特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES; 東京都杉並区荻窪五丁目26番13号 3階 3rd Floor, 26-13, Ogikubo 5-chome, Suginami-ku, Tokyo 1670051, JP
Priority Data:
2017-19155329.09.2017JP
Title (EN) CRUCIBLE-SUPPORTING PEDESTAL, QUARTZ CRUCIBLE-SUPPORTING DEVICE, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
(FR) SOCLE DE SUPPORT DE CREUSET, DISPOSITIF DE SUPPORT DE CREUSET EN QUARTZ, ET PROCÉDÉ DE PRODUCTION D’UN MONOCRISTAL DE SILICIUM
(JA) 坩堝支持台座、石英坩堝支持装置およびシリコン単結晶の製造方法
Abstract:
(EN) A crucible supporting pedestal (12) is provided with a recessed fitting portion (122) to which a dividable graphite member (11) can fit, and is so configured that: an opening edge (123) of the recessed fitting portion (122) is arranged at such a position that a contacting portion (P1) of the recessed fitting portion (122) which contacts with the dividable graphite member (11) can become higher than the surface of a solidified product (M1) of a silicon melt which is left in a quartz crucible (221) after a silicon single crystal is grown; and a force acting on the dividable graphite member (11) in association with the expansion of the silicon melt during the solidification of the silicon melt can act on a lower position than the contacting portion (P1).
(FR) La présente invention concerne un socle de support de creuset (12) muni d’une partie d’ajustement renfoncée (122) à laquelle un élément en graphite divisable (11) peut s’ajuster, et est configuré de sorte que : un bord d’ouverture (123) de la partie d’ajustement renfoncée (122) est disposé au niveau d’une position telle qu’une partie de mise en contact (P1) de la partie d’ajustement renfoncée (122) qui entre en contact avec l’élément en graphite divisable (11) peut devenir supérieure à la surface d’un produit solidifié (M1) d’une masse fondue de silicium qui est laissée dans un creuset en quartz (221) après qu’un monocristal de silicium s'est développé ; et une force agissant sur l’élément en graphite divisable (11) en association avec l’expansion de la masse fondue de silicium durant la solidification de la masse fondue de silicium peut agir sur une position inférieure par rapport à la partie de mise en contact (P1).
(JA) 坩堝支持台座(12)は、分割黒鉛部材(11)が嵌合可能な嵌合凹部(122)を備え、嵌合凹部(122)の開口縁(123)は、分割黒鉛部材(11)との接触部(P1)が、シリコン単結晶の育成後に石英坩堝(221)に残っているシリコン融液の固化物(M1)の表面よりも高くなる位置に設けられ、シリコン融液の固化時の膨張に伴い分割黒鉛部材(11)に作用する力が、接触部(P1)よりも低い位置に作用するように構成されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)