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1. (WO2019064524) POLISHING SOLUTION, POLISHING SOLUTION SET, AND POLISHING METHOD
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Pub. No.: WO/2019/064524 International Application No.: PCT/JP2017/035588
Publication Date: 04.04.2019 International Filing Date: 29.09.2017
IPC:
H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
日立化成株式会社 HITACHI CHEMICAL COMPANY, LTD. [JP/JP]; 東京都千代田区丸の内一丁目9番2号 9-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1006606, JP
Inventors:
金丸 真美子 KANAMARU Mamiko; JP
山村 奈央 YAMAMURA Nao; JP
Agent:
長谷川 芳樹 HASEGAWA Yoshiki; JP
清水 義憲 SHIMIZU Yoshinori; JP
平野 裕之 HIRANO Hiroyuki; JP
Priority Data:
Title (EN) POLISHING SOLUTION, POLISHING SOLUTION SET, AND POLISHING METHOD
(FR) SOLUTION DE POLISSAGE, ENSEMBLE POUR SOLUTION DE POLISSAGE ET PROCÉDÉ DE POLISSAGE
(JA) 研磨液、研磨液セット及び研磨方法
Abstract:
(EN) A polishing solution containing abrasive grains, a copolymer and a liquid medium, wherein the copolymer contains a structural unit derived from at least one styrene compound selected from the group consisting of styrene and a styrene derivative and a structural unit derived from at least one compound selected from the group consisting of acrylic acid and maleic acid, and the content ratio of the structural unit derived from the styrene compound in the copolymer is 15 mol% or more.
(FR) L'invention concerne une solution de polissage contenant des grains abrasifs, un copolymère et un milieu liquide, le copolymère contenant un motif de structure issu d'au moins un composé du styrène choisi dans le groupe constitué par le styrène et un dérivé du styrène et un motif de structure issu d'au moins un composé choisi dans le groupe constitué par l'acide acrylique et l'acide maléique et le rapport de la teneur du motif de structure issu du composé du styrène dans le copolymère étant supérieure ou égale à 15 % en moles.
(JA) 砥粒と、共重合体と、液状媒体と、を含有し、前記共重合体が、スチレン及びスチレン誘導体からなる群より選ばれる少なくとも一種のスチレン化合物に由来する構造単位と、アクリル酸及びマレイン酸からなる群より選ばれる少なくとも一種に由来する構造単位とを有し、前記共重合体において前記スチレン化合物に由来する構造単位の比率が15mol%以上である、研磨液。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)