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1. (WO2019064521) ELECTRON BEAM APPARATUS, AND DEVICE MANUFACTURING METHOD
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Pub. No.: WO/2019/064521 International Application No.: PCT/JP2017/035581
Publication Date: 04.04.2019 International Filing Date: 29.09.2017
IPC:
H01L 21/027 (2006.01) ,G03F 7/20 (2006.01) ,H01J 37/305 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
305
for casting, melting, evaporating, or etching
Applicants:
株式会社ニコン NIKON CORPORATION [JP/JP]; 東京都港区港南二丁目15番3号 15-3, Konan 2-chome, Minato-ku, Tokyo 1086290, JP
Inventors:
佐藤 真路 SATO, Shinji; JP
Agent:
立石 篤司 TATEISHI, Atsuji; JP
Priority Data:
Title (EN) ELECTRON BEAM APPARATUS, AND DEVICE MANUFACTURING METHOD
(FR) APPAREIL À FAISCEAU ÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION DE DISPOSITIF
(JA) 電子ビーム装置及びデバイス製造方法
Abstract:
(EN) An electron beam exposure apparatus has a plurality of electron beam optical systems (70i) that each make electrons into an electron beam (EB) and bombard a target therewith, said electrons being produced from a photoelectric conversion layer of a photoelectric element (54i) due to irradiation with at least one light beam. Each of the plurality of electron beam optical systems (70i) has electromagnetic lenses (e.g. 70a, 70b), and pathway members (e.g. 196i, 202i) that delineate electron beam pathways from a space (34) in which a plurality of the photoelectric elements (54i) are positioned. The electron beam pathways are each isolated from spaces in which the electromagnetic lenses are positioned.
(FR) Cette invention concerne un appareil d'exposition à un faisceau électronique, comprenant une pluralité de systèmes optiques à faisceau électronique (70i) dont chacun forme des électrons en un faisceau électronique (EB) et bombarde une cible avec celui-ci, lesdits électrons étant produits à partir d'une couche de conversion photoélectrique d'un élément photoélectrique (54i) sous l'effet d'une irradiation avec au moins un faisceau lumineux. Chacun de la pluralité de systèmes optiques à faisceau électronique (70i) comprend des lentilles électromagnétiques (par exemple, 70a, 70b), et des éléments de trajet (par exemple 196i, 202i) qui délimitent des trajets de faisceau électronique dans un espace (34) dans lequel une pluralité des éléments photoélectriques (54i) sont positionnés. Chacun des trajets de faisceau électronique est isolée des espaces dans lesquels les lentilles électromagnétiques sont positionnées.
(JA) 電子ビーム露光装置は、少なくとも1つの光ビームの照射により光電素子(54)の光電変換層から発生する電子を電子ビーム(EB)としてターゲットに照射する電子ビーム光学系(70)を複数有し、複数の電子ビーム光学系(70)のそれぞれは、電磁レンズ(70a、70b等)と、光電素子(54)が複数配置された空間(34)から電子ビームの通路を区画する通路部材(196、202等)と、を有し、電子ビームの各通路は、電磁レンズが配置される空間から隔離されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)