Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019064506) ETCHING SOLUTION AND ETCHING CONCENTRATE FOR MULTILAYER FILM, AND ETCHING METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/064506 International Application No.: PCT/JP2017/035529
Publication Date: 04.04.2019 International Filing Date: 29.09.2017
IPC:
C23F 1/18 (2006.01) ,C23F 1/26 (2006.01) ,H01L 21/28 (2006.01) ,H01L 21/308 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
F
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
1
Etching metallic material by chemical means
10
Etching compositions
14
Aqueous compositions
16
Acidic compositions
18
for etching copper or alloys thereof
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
F
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
1
Etching metallic material by chemical means
10
Etching compositions
14
Aqueous compositions
16
Acidic compositions
26
for etching refractory metals
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
308
using masks
Applicants:
パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP/JP]; 大阪府大阪市中央区城見2丁目1番61号 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors:
白濱 祐二 SHIRAHAMA Yuji; --
着能 真 CHAKUNO Makoto; --
Agent:
廣幸 正樹 HIROKOH Masaki; JP
Priority Data:
Title (EN) ETCHING SOLUTION AND ETCHING CONCENTRATE FOR MULTILAYER FILM, AND ETCHING METHOD
(FR) SOLUTION DE GRAVURE ET CONCENTRÉ DE GRAVURE POUR FILM MULTICOUCHES ET PROCÉDÉ DE GRAVURE
(JA) 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
Abstract:
(EN) Provided is an etching solution which is for etching a multilayer film composed of a copper layer having a large film thickness and a titanium base layer, and can be used even when the concentration of metal ions is 8,000 ppm or higher. The etching solution includes (a) hydrogen peroxide, (b) a fluorine ion supply source, (c) azoles, (d) a hydrogen peroxide stabilizer, (e) an organic acid, (f) amines, and (g) water, wherein a methane sulfonic acid and one organic acid among lactic acid, succinic acid, glutaric acid, and malonic acid are used as the organic acid, or lactic acid is used alone as the organic acid.
(FR) L'invention concerne une solution de gravure qui est destinée à la gravure d'un film multicouches composé d'une couche de cuivre ayant une grande épaisseur de film et d'une couche de base en titane et qui peut être utilisée même lorsque la concentration d'ions métalliques est supérieure ou égale à 8 000 ppm. La solution de gravure comprend (a) du peroxyde d'hydrogène, (b) une source d'apport d'ions fluor, (c) des azoles, (d) un stabilisant de peroxyde d'hydrogène, (e) un acide organique, (f) des amines et (g) de l'eau, un acide méthanesulfonique et un acide organique parmi l'acide lactique, l'acide succinique, l'acide glutarique et l'acide malonique étant utilisés en tant qu'acide organique ou l'acide lactique étant utilisé seul en tant qu'acide organique.
(JA) 膜厚の厚い銅層と下地のチタン層の多層膜をエッチングするエッチング液で、金属イオン濃度が8,000ppm以上でも使用することができるエッチング液を提供する。 (a)過酸化水素と、(b)フッ素イオン供給源と、(c)アゾール類と、(d)過酸化水素安定剤と、(e)有機酸と、(f)アミン類と、(g)水を含み、前記有機酸はメタンスルホン酸と、乳酸、コハク酸、グルタル酸、マロン酸のうち一種の有機酸若しくは、乳酸単独で用いられるエッチング液。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)