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1. (WO2019064435) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
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Pub. No.: WO/2019/064435 International Application No.: PCT/JP2017/035242
Publication Date: 04.04.2019 International Filing Date: 28.09.2017
IPC:
H01L 21/223 (2006.01) ,H01L 21/28 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
223
using diffusion into, or out of, a solid from or into a gaseous phase
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
Applicants:
株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区神田鍛冶町三丁目4番地 3-4, Kandakaji-cho, Chiyoda-ku, TOKYO 1010045, JP
Inventors:
出貝 求 DEGAI, Motomu; JP
芦原 洋司 ASHIHARA, Hiroshi; JP
Priority Data:
Title (EN) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
(FR) PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEUR, DISPOSITIF DE TRAITEMENT DE SUBSTRAT, ET PROGRAMME
(JA) 半導体装置の製造方法、基板処理装置およびプログラム
Abstract:
(EN) [Problem] To suppress the diffusion of impurities from a silicon film to which the impurities are added, to a metal film formed thereon. [Solution] The present invention includes performing: a step for supplying a dopant-containing gas which includes a dopant to a substrate on which a metal film and a film other than the metal film are formed, on a film to which the dopant has been added; and a step for removing the dopant-containing gas from above the substrate, wherein the dopant is selectively added to the metal film.
(FR) Le problème décrit par la présente invention est de supprimer la diffusion d'impuretés d'un film de silicium auquel les impuretés sont ajoutées, vers un film métallique formé sur ce dernier. La solution de l'invention comprend : une étape consistant à fournir un gaz contenant un dopant qui renferme un dopant à un substrat sur lequel sont formés un film métallique et un film autre que le film métallique, sur un film auquel le dopant a été ajouté ; et une étape d'élimination du gaz contenant un dopant sur le substrat, le dopant étant sélectivement ajouté au film métallique.
(JA) 課題:不純物を添加したシリコン膜から、その上に形成された金属膜への不純物が拡散してしまうことを抑制する。 解決手段:ドーパントが添加された膜の上に、金属膜と、当該金属膜以外の膜が形成された基板に対して、前記ドーパントを含むドーパント含有ガスを供給する工程と、前記基板上から前記ドーパント含有ガスを除去する工程と、を行い、前記金属膜に前記ドーパントを選択添加する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)