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1. (WO2019064414) DISPLAY DEVICE AND PRODUCTION METHOD FOR SAME
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Pub. No.: WO/2019/064414 International Application No.: PCT/JP2017/035177
Publication Date: 04.04.2019 International Filing Date: 28.09.2017
IPC:
G09F 9/30 (2006.01) ,G09F 9/00 (2006.01)
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30
in which the desired character or characters are formed by combining individual elements
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
斉藤 貴翁 SAITOH Takao; --
山中 雅貴 YAMANAKA Masaki; --
神崎 庸輔 KANZAKI Yohsuke; --
三輪 昌彦 MIWA Masahiko; --
金子 誠二 KANEKO Seiji; --
Agent:
特許業務法人前田特許事務所 MAEDA & PARTNERS; 大阪府大阪市北区堂島浜1丁目2番1号 新ダイビル23階 Shin-Daibiru Bldg. 23F, 2-1, Dojimahama 1-chome, Kita-ku, Osaka-shi, Osaka 5300004, JP
Priority Data:
Title (EN) DISPLAY DEVICE AND PRODUCTION METHOD FOR SAME
(FR) DISPOSITIF D'AFFICHAGE ET SON PROCÉDÉ DE PRODUCTION
(JA) 表示装置及びその製造方法
Abstract:
(EN) According to the present invention, at a bending part (B) of a frame region (F), at least one layer of inorganic insulating film constitutes a TFT layer and has formed therein an opening part (A) that passes through the inorganic insulating film and exposes an upper surface of a resin substrate (10). Frame wiring (12ea) is provided upon the resin substrate (10) as exposed by the opening part (A). Where the at least one layer of inorganic insulating film that constitutes the TFT layer contacts the upper surface of the resin substrate (10), the inorganic insulating film is formed from a silicon oxinitride film.
(FR) Selon la présente invention, au niveau d'une partie de flexion (B) d'une région de cadre (F), au moins une couche de film isolant inorganique constitue une couche de TFT et comprend une partie d'ouverture (A) qui traverse le film isolant inorganique et met à nu une surface supérieure d'un substrat de résine (10). Un câblage de cadre (12ea) est disposé sur le substrat de résine (10) et mis à nu par la partie d'ouverture (A). À l'emplacement où ladite couche de film isolant inorganique qui constitue la couche TFT entre en contact avec la surface supérieure du substrat de résine (10), le film isolant inorganique est constitué d'un film d'oxinitrure de silicium.
(JA) 額縁領域(F)の折り曲げ部(B)では、TFT層を構成する少なくとも一層の無機絶縁膜にその無機絶縁膜を貫通して樹脂基板(10)の上面を露出させる開口部(A)が形成され、額縁配線(12ea)は、開口部(A)から露出する樹脂基板(10)上に設けられ、TFT層を構成する少なくとも一層の無機絶縁膜のうち樹脂基板(10)の上面に接触する無機絶縁膜は、酸窒化シリコン膜により形成されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)