Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019064293) METROLOGY METHOD AND SYSTEM
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/064293 International Application No.: PCT/IL2018/050958
Publication Date: 04.04.2019 International Filing Date: 29.08.2018
IPC:
H01L 21/66 (2006.01) ,H01J 37/26 (2006.01) ,G01B 15/02 (2006.01) ,G01B 11/06 (2006.01) ,G01N 23/225 (2018.01) ,G01N 21/84 (2006.01) ,G01N 23/227 (2018.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
26
Electron or ion microscopes; Electron- or ion-diffraction tubes
G PHYSICS
01
MEASURING; TESTING
B
MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
15
Measuring arrangements characterised by the use of wave or particle radiation
02
for measuring thickness
G PHYSICS
01
MEASURING; TESTING
B
MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11
Measuring arrangements characterised by the use of optical means
02
for measuring length, width, or thickness
06
for measuring thickness
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23
Investigating or analysing materials by the use of wave or particle radiation not covered by group G01N21/ or G01N22/159
22
by measuring secondary emission
225
using electron or ion microprobe
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
84
Systems specially adapted for particular applications
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23
Investigating or analysing materials by the use of wave or particle radiation not covered by group G01N21/ or G01N22/159
22
by measuring secondary emission
227
by measuring photoelectric effect, e.g. Auger electrons
Applicants:
NOVA MEASURING INSTRUMENTS LTD. [IL/IL]; Weizmann Scientific Park P.O.B. 266 7610201 Rehovot, IL
Inventors:
MACHAVARIANI, Vladimir; IL
SHIFRIN, Michael; IL
KANDEL, Daniel; IL
KUCHEROV, Victor; IL
ZISELMAN, Igor; IL
URENSKI, Ronen; IL
SENDELBACH, Matthew; US
Agent:
STADLER, Svetlana; REINHOLD COHN AND PARTNERS P.O.B. 13239 6113102 Tel-Aviv, IL
Priority Data:
62/563,11326.09.2017US
Title (EN) METROLOGY METHOD AND SYSTEM
(FR) PROCÉDÉ ET SYSTÈME DE MÉTROLOGIE
Abstract:
(EN) A control system for use in measuring one or more parameters of a patterned structure. The control system is configured as a computer system and comprises: an input utility configured to receive input data comprising raw measured TEM image data, TEMmeas, data indicative of a TEM measurement mode; and a data processor configured to process the raw measured TEM image data, TEMmeas, and generate output data indicative of one or more parameters of a patterned structure. The data processor comprises an optimization module configured and operable to utilize the data indicative of the TEM measurement mode and perform a fitting procedure between the raw measured TEM image data, TEMmeas, and predetermined simulated TEM image data, TEMsimul, and determine one or more parameters of the structure from the simulated image data corresponding to a best fit condition. The predetermined simulated TEM image data, TEMsimul, is based on a parametrized three-dimensional model of features of the patterned structure, and comprises one or more simulated TEM images and a simulated weight map comprising weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure.
(FR) La présente invention concerne un système de commande servant à mesurer un ou plusieurs paramètres d'une structure à motifs. Le système de commande est configuré sous la forme d'un système informatique et comprend : un utilitaire d'entrée configuré de sorte à recevoir des données d'entrée comprenant des données d'image de microscope TEM mesurées brutes (TEMmeas), des données indiquant un mode de mesure de microscope TEM; et un processeur de données configuré de sorte à traiter les données d'image de microscope TEM mesurées brutes (TEMmeas) et à générer des données de sortie indiquant un ou plusieurs paramètres d'une structure à motifs. Le processeur de données comprend un module d'optimisation configuré et destiné à utiliser les données indiquant le mode de mesure de microscope TEM et à effectuer une procédure d'ajustement entre les données d'image de microscope TEM mesurées brutes (TEMmeas) et des données d'image de microscope TEM simulées prédéterminées (TEMsimul) et à déterminer un ou plusieurs paramètres de la structure à partir des données d'image simulées correspondant à une condition de meilleur ajustement. Les données d'image de microscope TEM simulées prédéterminées (TEMsimul) sont basées sur un modèle tridimensionnel paramétré de caractéristiques de la structure à motifs et comprennent une ou plusieurs images de microscope TEM simulées et une carte de pondération simulée comprenant des poids attribués à différentes régions dans l'image de microscope TEM simulée correspondant à différentes caractéristiques de la structure à motifs.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)