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1. (WO2019064172) PHOTORESIST PATTERNING ON SILICON NITRIDE
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Pub. No.: WO/2019/064172 International Application No.: PCT/IB2018/057394
Publication Date: 04.04.2019 International Filing Date: 25.09.2018
IPC:
G03F 7/00 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504, US
IBM UNITED KINGDOM LIMITED [GB/GB]; PO Box 41, North Harbour Portsmouth Hampshire PO6 3AU, GB (MG)
IBM (CHINA) INVESTMENT COMPANY LIMITED [CN/CN]; 25/F, Pangu Plaza No.27, Central North 4th Ring Road, Chaoyang District, Beijing 100101, CN (MG)
Inventors:
SESHADRI, Indira; US
DE SILVA, Ekmini, Anuja; US
LIU, Chi-Chun; US
CHI, Cheng; US
GUO, Jing; US
MELI THOMPSON, Luciana; US
Agent:
GASCOYNE, Belinda; GB
Priority Data:
15/719,60829.09.2017US
Title (EN) PHOTORESIST PATTERNING ON SILICON NITRIDE
(FR) FORMATION DE MOTIFS DE RÉSINE PHOTOSENSIBLE SUR DU NITRURE DE SILICIUM
Abstract:
(EN) Embodiments of the present invention provide systems and methods for trapping amines. This in turn mitigates the undesired scumming and footing effects in a photoresist. The polymer brush is grafted onto a silicon nitride surface. The functional groups and molecular weight of the polymer brush provide protons and impose steric hindrance, respectively, to trap amines diffusing from a silicon nitride surface.
(FR) Selon divers modes de réalisation, la présente invention concerne des systèmes et des procédés de piégeage d'amines. Ceci permet à son tour d'atténuer les effets de graissage et de base indésirables dans une résine photosensible. La brosse en polymère est greffée sur une surface de nitrure de silicium. Les groupes fonctionnels et le poids moléculaire de la brosse en polymère fournissent des protons et imposent un empêchement stérique, respectivement, pour piéger des amines se diffusant à partir d'une surface de nitrure de silicium.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)