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1. (WO2019064111) RESISTIVE MEMORY DEVICE
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Pub. No.: WO/2019/064111 International Application No.: PCT/IB2018/056992
Publication Date: 04.04.2019 International Filing Date: 13.09.2018
IPC:
G11C 11/56 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56
using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504, US
RHEINISCH-WESTFÄLISCHE TECHNISCHE HOCHSCHULE (RWTH) AACHEN [DE/DE]; Templergraben 55 52062 Aachen, DE
IBM (CHINA) INVESTMENT COMPANY LTD. [CN/CN]; 25/F, Pangu Plaza, No. 27, Central North 4th Ring Road, Chaoyang District Beijing, Beijing 100101, CN (MG)
IBM DEUTSCHLAND GMBH [DE/DE]; c/o IBM Deutschland Management & Business Support GmbH Patentwesen und Urheberrecht Postfach 71137 Ehningen, DE (MG)
Inventors:
KOELMANS, Wabe; CH
SEBASTIAN, Abu; CH
JONNALAGADDA, Vara; CH
SALINGA, Martin; DE
KERSTING, Benedikt; CH
Agent:
LUECK, Stephan; DE
Priority Data:
15/715,21426.09.2017US
Title (EN) RESISTIVE MEMORY DEVICE
(FR) DISPOSITIF DE MÉMOIRE RÉSISTIVE
Abstract:
(EN) The invention is notably directed to a resistive memory device comprising a control unit for controlling the resistive memory device and a plurality of memory cells. The plurality of memory cells includes a first terminal, a second terminal and a phase change segment comprising a phase-change material for storing information in a plurality of resistance states. The phase change segment is arranged between the first terminal and the second terminal. The phase change material consists of antimony. Furthermore, at least one of the dimensions of the phase change segment is smaller than 15 nanometers. Additional implementations of the resistive memory device include a related method, a related control unit, a related memory cell and a related computer program product.
(FR) L'invention concerne notamment un dispositif de mémoire résistive comprenant une unité de commande pour commander le dispositif de mémoire résistive et une pluralité de cellules de mémoire. La pluralité de cellules de mémoire comprend un premier terminal, un second terminal et un segment à changement de phase comprenant un matériau à changement de phase pour stocker des informations dans une pluralité d'états de résistance. Le segment à changement de phase est agencé entre le premier terminal et le second terminal. Le matériau à changement de phase est constitué d'antimoine. En outre, au moins une des dimensions du segment à changement de phase est inférieure à 15 nanomètres. Des modes de réalisation supplémentaires du dispositif de mémoire résistive comprennent un procédé associé, une unité de commande associée, une cellule de mémoire associée et un produit-programme informatique associé.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)