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1. (WO2019063732) TAILORING HOLES CARRIER CONCENTRATION IN CUXCRYO2
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Pub. No.: WO/2019/063732 International Application No.: PCT/EP2018/076349
Publication Date: 04.04.2019 International Filing Date: 27.09.2018
IPC:
C04B 35/12 (2006.01) ,C04B 35/45 (2006.01) ,C04B 35/622 (2006.01) ,C03C 17/245 (2006.01) ,C23C 16/40 (2006.01) ,C23C 16/448 (2006.01) ,H01L 29/26 (2006.01) ,C04B 111/94 (2006.01)
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
12
based on chromium oxide
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
45
based on copper oxide or solid solutions thereof with other oxides
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
622
Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17
Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating
22
with other inorganic material
23
Oxides
245
by deposition from the vapour phase
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
448
characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
26
including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24259
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
111
Function, property or use of the mortars, concrete or artificial stone
90
Electrical properties
94
Electrically conducting materials
Applicants:
LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST) [LU/LU]; 5, avenue des Hauts-Fourneaux 4362 Esch-sur-Alzette, LU
Inventors:
LENOBLE, Damien; BE
Agent:
LECOMTE & PARTNERS; P.O. Box 1623 1016 Luxembourg, LU
Priority Data:
LU10046227.09.2017LU
Title (EN) TAILORING HOLES CARRIER CONCENTRATION IN CUXCRYO2
(FR) ADAPTATION DE LA CONCENTRATION DE TRANSPORT DE TROUS DANS CUXCRYO2
Abstract:
(EN) The first object of the invention is directed to a method for modulating the number of charge carriers p in CuxCryO2, said method comprising the steps of (a) depositing a film of CuxCryO2 on a substrate; and (b) annealing at a temperature T said film of deposited CuxCryO2, wherein said subscripts x and y are positive numbers whose the sum is equal or inferior to 2. Said method is remarkable in that said log (p) = α T2 + β T + γ,wherein said temperature T is expressed degree Celsius, wherein α is a first parameter ranging from – 0.00011 to – 0.009, wherein β is a second parameter ranging from + 0.12 to + 0.14, and wherein γ is a third parameter ranging from - 27.40 to – 22.42. The second object of the invention is directed to a semiconductor comprising CuxCryO2 deposited on a substrate and obtainable by the method in accordance with the first object of the invention.
(FR) Le premier objet de la présente invention concerne un procédé de modulation du nombre de transporteurs de charge p dans du CuxCryO2, ledit procédé comprenant les étapes de (a) dépôt d'un film de CuxCryO2 sur un substrat; et (b) hybridation à une température T dudit film de CuxCryO2 déposé, lesdits indices x et y étant des nombres positifs dont la somme est inférieure ou égale à 2. Ledit procédé est remarquable en ce que ledit log (p) = α T2 + β T + γ, ladite température T est exprimée en degré Celsius, α étant un premier paramètre s'étendant de -0,00011 à -0,009, β étant un second paramètre s'étendant de +0,12 à +0,14, et γ étant un troisième paramètre s'étendant de -27,40 à -22,42. Le second objet de l'invention est dirigé vers un semi-conducteur comprenant du CuxCryO2 déposé sur un substrat et pouvant être obtenu au moyen du procédé selon le premier objet de l'invention.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)