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1. (WO2019063703) FIELD-EFFECT TRANSISTOR WITH A TOTAL CONTROL OF THE ELECTRICAL CONDUCTIVITY ON ITS CHANNEL
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Pub. No.: WO/2019/063703 International Application No.: PCT/EP2018/076285
Publication Date: 04.04.2019 International Filing Date: 27.09.2018
IPC:
H01L 29/66 (2006.01) ,H01L 29/786 (2006.01) ,H01L 21/16 (2006.01) ,H01L 29/24 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
16
the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
24
including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20 or H01L29/22246
Applicants:
LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST) [LU/LU]; 5, avenue des Hauts-Fourneaux 4362 Esch-sur-Alzette, LU
Inventors:
LENOBLE, Damien; BE
Agent:
LECOMTE & PARTNERS; P.O. Box 1623 1016 Luxembourg, LU
Priority Data:
LU10046127.09.2017LU
Title (EN) FIELD-EFFECT TRANSISTOR WITH A TOTAL CONTROL OF THE ELECTRICAL CONDUCTIVITY ON ITS CHANNEL
(FR) TRANSISTOR À EFFET DE CHAMP AYANT UN CONTRÔLE TOTAL DE LA CONDUCTIVITÉ ÉLECTRIQUE SUR SON CANAL
Abstract:
(EN) The first object of the invention is directed to field-effect gate transistor comprising (a) a substrate, (b) a source terminal, (c) a drain terminal, and (d) a channel between said source terminal and said drain terminal, said channel being a layer of CuxCryO2 in which the y/x ratio is superior to 1. Said field-effect gate transistor is remarkable in that said channel of CuxCryO2 presents a gradient of holes concentration. The second object of the invention is directed to a method for laser annealing a field-effect gate transistor in accordance with the first object of the invention.
(FR) Le premier objet de l'invention concerne un transistor de grille à effet de champ comprenant (a) un substrat, (b) une borne de source, (c) une borne de drain et (d) un canal entre ladite borne de source et ladite borne de drain, ledit canal étant une couche de CuxCryO2 dans laquelle le rapport y/x est supérieur à 1. Ledit transistor de grille à effet de champ est remarquable en ce que ledit canal de CuxCryO2 présente un gradient de concentration de trous. Le second objet de l'invention concerne un procédé de recuit laser d'un transistor de grille à effet de champ selon le premier objet de l'invention.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)