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1. (WO2019063472) SCHOTTKY BARRIER DIODE WITH IMPROVED SCHOTTKY CONTACT FOR HIGH VOLTAGES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/063472 International Application No.: PCT/EP2018/075773
Publication Date: 04.04.2019 International Filing Date: 24.09.2018
IPC:
H01L 29/872 (2006.01) ,H01L 29/06 (2006.01) ,H01L 29/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
872
Schottky diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
Applicants:
AMS AG [AT/AT]; Schloss Premstätten Tobelbader Str. 30 8141 Premstätten, AT
Inventors:
KNAIPP, Martin; AT
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
17193246.026.09.2017EP
Title (EN) SCHOTTKY BARRIER DIODE WITH IMPROVED SCHOTTKY CONTACT FOR HIGH VOLTAGES
(FR) DIODE À BARRIÈRE SCHOTTKY À CONTACT SCHOTTKY AMÉLIORÉ POUR TENSIONS ÉLEVÉES
Abstract:
(EN) The Schottky barrier diode comprises a semiconductor body with a main surface (10), a doped region (1) and a further doped region (2) of the semiconductor body, which extend to the main surface, the doped region and the further doped region having opposite types of electric conductivity, a subregion (DPWell) and a further subregion (SPWell) of the further doped region, the subregions being contiguous with one another, the further subregion (SPWell) comprising a higher doping concentration than the subregion (DPWell), a silicide layer (6) on the main surface, the silicide layer forming an interface with the doped region, an electric contact (7) on the doped region, and a further electric contact (8) electrically connecting the further doped region with the silicide layer.
(FR) L'invention porte sur une diode à barrière Schottky qui comprend un corps semi-conducteur présentant une surface principale (10), une zone dopée (1) et une autre zone dopée (2) du corps semi-conducteur qui s'étendent jusqu'à la surface principale, la zone dopée et l'autre zone dopée ayant des types de conductivité électrique opposés, une sous-zone (DPWell) et une autre sous-zone (SPWell)) de l'autre zone dopée, les sous-zones étant contiguës l'une à l'autre, l'autre sous-zone (SPWell) comprenant une plus haute concentration de dopage que la sous-zone (DPWell), une couche de siliciure (6) sur la surface principale, la couche de siliciure formant une interface avec la zone dopée, un contact électrique (7) sur la zone dopée, et un autre contact électrique (8) connectant électriquement l'autre zone dopée à la couche de siliciure.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)