Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019063412) RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING RADIATION-EMITTING SEMICONDUCTOR COMPONENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/063412 International Application No.: PCT/EP2018/075488
Publication Date: 04.04.2019 International Filing Date: 20.09.2018
IPC:
H01L 33/58 (2010.01) ,H01L 33/00 (2010.01) ,H01L 27/15 (2006.01) ,H01L 33/08 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15
including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
08
with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
ENZMANN, Roland Heinrich; MY
HALBRITTER, Hubert; DE
BEHRINGER, Martin Rudolf; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2017 122 325.826.09.2017DE
Title (EN) RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING RADIATION-EMITTING SEMICONDUCTOR COMPONENT
(FR) COMPOSANT SEMI-CONDUCTEUR ÉMETTEUR DE RAYONNEMENT ET PROCÉDÉ DE FABRICATION DE COMPOSANTS SEMI-CONDUCTEURS ÉMETTEURS DE RAYONNEMENT
(DE) STRAHLUNGSEMITTIERENDES HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG VON STRAHLUNGSEMITTIERENDEN HALBLEITERBAUELEMENTEN
Abstract:
(EN) The invention relates to a radiation-emitting semiconductor component (1), comprising a semiconductor body (2) having an active region (20) intended for generating radiation, a carrier body (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is secured to the semiconductor body by means of direct bonding. The invention further relates to a method for producing radiation-emitting semiconductor components.
(FR) L'invention concerne un composant semi-conducteur émetteur de rayonnement (1) comprenant un corps semi-conducteur (2) pourvu d'une zone active (20) destinée à générer un rayonnement, un support (3) sur lequel est disposé le corps semi-conducteur, ainsi qu’un élément optique (4), cet élément optique étant fixé au corps semi-conducteur par une liaison directe. L'invention concerne en outre un procédé de fabrication de composants semi-conducteurs émetteurs de rayonnement.
(DE) Es wird ein strahlungsemittierendes Halbleiterbauelement (1) angegeben, umfassend einen Halbleiterkörper (2) mit einem zur Erzeugung von Strahlung vorgesehenen aktiven Bereich (20), einen Träger (3), auf dem der Halbleiterkörper angeordnet ist und ein optisches Element (4), wobei das optische Element mit einer direkten Bondverbindung an dem Halbleiterkörper befestigt ist. Weiterhin wird ein Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen angegeben.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)